Optically induced charge transport through submicron channels

Klaus Dieter Hof; Clemens Rossler; Werner Wegscheider; Stefan Ludwig; Alexander W. Holleitner

doi:10.1016/j.physe.2007.10.080

Optically induced charge transport through submicron channels

Klaus Dieter Hof, Clemens Rossler, Werner Wegscheider, Stefan Ludwig, Alexander W. Holleitner

Research output: Contribution to journal › Article › peer-review

5 Scopus citations

Abstract

We report on optically induced charge transport measurements through conducting submicron channels in AlGaAs/GaAs heterostructures. The channels are defined within a two-dimensional electron gas in a quantum well by chemical etching. By applying a voltage to a top gate, the channels can be depleted electrostatically. We present two different heterostructure designs and two processing techniques to build nanostructured optoelectronic detectors. We demonstrate the suitability of our devices for optically induced charge transport measurements in the mesoscopic regime.

Original language	English
Pages (from-to)	1739-1741
Number of pages	3
Journal	Physica E: Low-Dimensional Systems and Nanostructures
Volume	40
Issue number	5
DOIs	https://doi.org/10.1016/j.physe.2007.10.080
State	Published - Mar 2008
Externally published	Yes

Keywords

Optical properties
Photodetector
Quantum wires

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10.1016/j.physe.2007.10.080

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abstract = "We report on optically induced charge transport measurements through conducting submicron channels in AlGaAs/GaAs heterostructures. The channels are defined within a two-dimensional electron gas in a quantum well by chemical etching. By applying a voltage to a top gate, the channels can be depleted electrostatically. We present two different heterostructure designs and two processing techniques to build nanostructured optoelectronic detectors. We demonstrate the suitability of our devices for optically induced charge transport measurements in the mesoscopic regime.",

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T1 - Optically induced charge transport through submicron channels

AU - Hof, Klaus Dieter

AU - Rossler, Clemens

AU - Wegscheider, Werner

AU - Ludwig, Stefan

AU - Holleitner, Alexander W.

PY - 2008/3

Y1 - 2008/3

N2 - We report on optically induced charge transport measurements through conducting submicron channels in AlGaAs/GaAs heterostructures. The channels are defined within a two-dimensional electron gas in a quantum well by chemical etching. By applying a voltage to a top gate, the channels can be depleted electrostatically. We present two different heterostructure designs and two processing techniques to build nanostructured optoelectronic detectors. We demonstrate the suitability of our devices for optically induced charge transport measurements in the mesoscopic regime.

AB - We report on optically induced charge transport measurements through conducting submicron channels in AlGaAs/GaAs heterostructures. The channels are defined within a two-dimensional electron gas in a quantum well by chemical etching. By applying a voltage to a top gate, the channels can be depleted electrostatically. We present two different heterostructure designs and two processing techniques to build nanostructured optoelectronic detectors. We demonstrate the suitability of our devices for optically induced charge transport measurements in the mesoscopic regime.

KW - Optical properties

KW - Photodetector

KW - Quantum wires

UR - http://www.scopus.com/inward/record.url?scp=39649087802&partnerID=8YFLogxK

U2 - 10.1016/j.physe.2007.10.080

DO - 10.1016/j.physe.2007.10.080

M3 - Article

AN - SCOPUS:39649087802

SN - 1386-9477

VL - 40

SP - 1739

EP - 1741

JO - Physica E: Low-Dimensional Systems and Nanostructures

JF - Physica E: Low-Dimensional Systems and Nanostructures

IS - 5

ER -

Optically induced charge transport through submicron channels

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Keywords

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