Optical study of gallium and nitrogen polarity layers of GaN grown on sapphire

A. Cros; N. V. Joshi; T. Smith; A. Cantarero; G. Martínez-Criado; O. Ambacher; M. Stutzmann

doi:10.1002/pssc.200303533

Optical study of gallium and nitrogen polarity layers of GaN grown on sapphire

A. Cros
, N. V. Joshi
, T. Smith
, A. Cantarero
, G. Martínez-Criado
, O. Ambacher
, M. Stutzmann

TUM Emeriti of Excellence

University of Valencia
Renishaw plc
Ilmenau University of Technology

Research output: Contribution to journal › Conference article › peer-review

2 Scopus citations

Abstract

A confocal Raman spectroscopic study was carried out on either side of an intentionally grown GaN inversion domain boundary between a pair of strips with opposite (Ga- or N-) polarity. It is shown that the Raman spectra on the N-polarity side displays an A1(TO) mode, prohibited by symmetry considerations, meanwhile on Ga-polarity material this peak is absent, indicating a lower density of defects present in this region. The Raman spectra reveal that in the lateral direction, the change in structural quality accross the inversion domain boundary is rather continuous and extends along 4 ± 1 μm.

Original language	English
Pages (from-to)	2699-2702
Number of pages	4
Journal	Physica Status Solidi C: Conferences
Issue number	7
DOIs	https://doi.org/10.1002/pssc.200303533
State	Published - 2003
Event	5th International Conference on Nitride Semiconductors, ICNS 2003 - Nara, Japan Duration: 25 May 2003 → 30 May 2003

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title = "Optical study of gallium and nitrogen polarity layers of GaN grown on sapphire",

abstract = "A confocal Raman spectroscopic study was carried out on either side of an intentionally grown GaN inversion domain boundary between a pair of strips with opposite (Ga- or N-) polarity. It is shown that the Raman spectra on the N-polarity side displays an A1(TO) mode, prohibited by symmetry considerations, meanwhile on Ga-polarity material this peak is absent, indicating a lower density of defects present in this region. The Raman spectra reveal that in the lateral direction, the change in structural quality accross the inversion domain boundary is rather continuous and extends along 4 ± 1 μm.",

author = "A. Cros and Joshi, \{N. V.\} and T. Smith and A. Cantarero and G. Mart{\'i}nez-Criado and O. Ambacher and M. Stutzmann",

year = "2003",

doi = "10.1002/pssc.200303533",

language = "English",

pages = "2699--2702",

journal = "Physica Status Solidi C: Conferences",

issn = "1610-1634",

publisher = "Wiley-VCH Verlag",

number = "7",

note = "5th International Conference on Nitride Semiconductors, ICNS 2003 ; Conference date: 25-05-2003 Through 30-05-2003",

}

TY - JOUR

T1 - Optical study of gallium and nitrogen polarity layers of GaN grown on sapphire

AU - Cros, A.

AU - Joshi, N. V.

AU - Smith, T.

AU - Cantarero, A.

AU - Martínez-Criado, G.

AU - Ambacher, O.

AU - Stutzmann, M.

PY - 2003

Y1 - 2003

N2 - A confocal Raman spectroscopic study was carried out on either side of an intentionally grown GaN inversion domain boundary between a pair of strips with opposite (Ga- or N-) polarity. It is shown that the Raman spectra on the N-polarity side displays an A1(TO) mode, prohibited by symmetry considerations, meanwhile on Ga-polarity material this peak is absent, indicating a lower density of defects present in this region. The Raman spectra reveal that in the lateral direction, the change in structural quality accross the inversion domain boundary is rather continuous and extends along 4 ± 1 μm.

AB - A confocal Raman spectroscopic study was carried out on either side of an intentionally grown GaN inversion domain boundary between a pair of strips with opposite (Ga- or N-) polarity. It is shown that the Raman spectra on the N-polarity side displays an A1(TO) mode, prohibited by symmetry considerations, meanwhile on Ga-polarity material this peak is absent, indicating a lower density of defects present in this region. The Raman spectra reveal that in the lateral direction, the change in structural quality accross the inversion domain boundary is rather continuous and extends along 4 ± 1 μm.

UR - https://www.scopus.com/pages/publications/33845422336

U2 - 10.1002/pssc.200303533

DO - 10.1002/pssc.200303533

M3 - Conference article

AN - SCOPUS:33845422336

SN - 1610-1634

SP - 2699

EP - 2702

JO - Physica Status Solidi C: Conferences

JF - Physica Status Solidi C: Conferences

IS - 7

T2 - 5th International Conference on Nitride Semiconductors, ICNS 2003

Y2 - 25 May 2003 through 30 May 2003

ER -

Optical study of gallium and nitrogen polarity layers of GaN grown on sapphire

Abstract

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