Optical study of gallium and nitrogen polarity layers of GaN grown on sapphire

A. Cros, N. V. Joshi, T. Smith, A. Cantarero, G. Martínez-Criado, O. Ambacher, M. Stutzmann

Research output: Contribution to journalConference articlepeer-review

2 Scopus citations


A confocal Raman spectroscopic study was carried out on either side of an intentionally grown GaN inversion domain boundary between a pair of strips with opposite (Ga- or N-) polarity. It is shown that the Raman spectra on the N-polarity side displays an A1(TO) mode, prohibited by symmetry considerations, meanwhile on Ga-polarity material this peak is absent, indicating a lower density of defects present in this region. The Raman spectra reveal that in the lateral direction, the change in structural quality accross the inversion domain boundary is rather continuous and extends along 4 ± 1 μm.

Original languageEnglish
Pages (from-to)2699-2702
Number of pages4
JournalPhysica Status Solidi C: Conferences
Issue number7
StatePublished - 2003
Event5th International Conference on Nitride Semiconductors, ICNS 2003 - Nara, Japan
Duration: 25 May 200330 May 2003


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