TY - JOUR
T1 - Optical study of gallium and nitrogen polarity layers of GaN grown on sapphire
AU - Cros, A.
AU - Joshi, N. V.
AU - Smith, T.
AU - Cantarero, A.
AU - Martínez-Criado, G.
AU - Ambacher, O.
AU - Stutzmann, M.
PY - 2003
Y1 - 2003
N2 - A confocal Raman spectroscopic study was carried out on either side of an intentionally grown GaN inversion domain boundary between a pair of strips with opposite (Ga- or N-) polarity. It is shown that the Raman spectra on the N-polarity side displays an A1(TO) mode, prohibited by symmetry considerations, meanwhile on Ga-polarity material this peak is absent, indicating a lower density of defects present in this region. The Raman spectra reveal that in the lateral direction, the change in structural quality accross the inversion domain boundary is rather continuous and extends along 4 ± 1 μm.
AB - A confocal Raman spectroscopic study was carried out on either side of an intentionally grown GaN inversion domain boundary between a pair of strips with opposite (Ga- or N-) polarity. It is shown that the Raman spectra on the N-polarity side displays an A1(TO) mode, prohibited by symmetry considerations, meanwhile on Ga-polarity material this peak is absent, indicating a lower density of defects present in this region. The Raman spectra reveal that in the lateral direction, the change in structural quality accross the inversion domain boundary is rather continuous and extends along 4 ± 1 μm.
UR - http://www.scopus.com/inward/record.url?scp=33845422336&partnerID=8YFLogxK
U2 - 10.1002/pssc.200303533
DO - 10.1002/pssc.200303533
M3 - Conference article
AN - SCOPUS:33845422336
SN - 1610-1634
SP - 2699
EP - 2702
JO - Physica Status Solidi C: Conferences
JF - Physica Status Solidi C: Conferences
IS - 7
T2 - 5th International Conference on Nitride Semiconductors, ICNS 2003
Y2 - 25 May 2003 through 30 May 2003
ER -