Optical properties of reactive-ion-etched Si/Si1-xGex heterostructures

T. Köster, J. Gondermann, B. Hadam, B. Spangenberg, M. Schütze, H. G. Roskos, H. Kurz, J. Brunner, G. Abstreiter

Research output: Contribution to journalArticlepeer-review

7 Scopus citations


A patterning technology for fabrication of nanometer structures in Si/SiGe heterosystems is developed. The method pursued here combines high-resolution electron-beam lithography with reactive-ion-etching pattern transfer. A modified SF6/O2 dry-etching process is optimized by varying the gas mixture to achieve the required anisotropy. Photoluminescence measurements are carried out on uniformly etched samples to determine the influence of the reactive-ion-etching process on the optical properties. Etch process induced surface modifications drastically alter the electrical surface potentials. They are identified by laser desorption. These modifications are partially removed by low-temperature postannealing steps. A qualitative model is presented to explain the observed effects. With this optimized technology, SiGe wires with lateral widths from 4 μm down to 25 nm are fabricated. Photoluminescence has been detected for structures as small as 600 nm.

Original languageEnglish
Pages (from-to)698-706
Number of pages9
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Issue number2
StatePublished - 1996


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