Abstract
A p-n homojunction GaAs-based photodetector is developed in order to operate in the near field of a subwavelength sized light source. It has a spatial resolution of about 270 nm, limited by diffusion of minority carriers. A detector with a built-in AlGaAs diffusion barrier is also studied, demonstrating an improved resolution of better than 100 nm.
| Original language | English |
|---|---|
| Pages (from-to) | 3090-3092 |
| Number of pages | 3 |
| Journal | Applied Physics Letters |
| Volume | 65 |
| Issue number | 24 |
| DOIs | |
| State | Published - 1994 |