Optical patterning of GaN films

M. K. Kelly; O. Ambacher; B. Dahlheimer; G. Groos; R. Dimitrov; H. Angerer; M. Stutzmann

doi:10.1063/1.117473

Optical patterning of GaN films

M. K. Kelly, O. Ambacher, B. Dahlheimer, G. Groos, R. Dimitrov, H. Angerer, M. Stutzmann

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Walter Schottky Institut

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Abstract

Patterned etching of GaN films was achieved with laser-induced thermal decomposition. High-energy laser pulses are used to locally heat the film above 900°C, causing rapid nitrogen effusion. Excess gallium is then removed by conventional etching. At exposures of 0.4 J/cm² with 355 nm light, etch rates of 50-70 nm per pulse were obtained. Illumination with an interference grating was used to produce trenches as narrow as 100 nm.

Original language	English
Pages (from-to)	1749-1751
Number of pages	3
Journal	Applied Physics Letters
Volume	69
Issue number	12
DOIs	https://doi.org/10.1063/1.117473
State	Published - 16 Sep 1996

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title = "Optical patterning of GaN films",

abstract = "Patterned etching of GaN films was achieved with laser-induced thermal decomposition. High-energy laser pulses are used to locally heat the film above 900°C, causing rapid nitrogen effusion. Excess gallium is then removed by conventional etching. At exposures of 0.4 J/cm2 with 355 nm light, etch rates of 50-70 nm per pulse were obtained. Illumination with an interference grating was used to produce trenches as narrow as 100 nm.",

author = "Kelly, {M. K.} and O. Ambacher and B. Dahlheimer and G. Groos and R. Dimitrov and H. Angerer and M. Stutzmann",

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AU - Kelly, M. K.

AU - Ambacher, O.

AU - Dahlheimer, B.

AU - Groos, G.

AU - Dimitrov, R.

AU - Angerer, H.

AU - Stutzmann, M.

PY - 1996/9/16

Y1 - 1996/9/16

N2 - Patterned etching of GaN films was achieved with laser-induced thermal decomposition. High-energy laser pulses are used to locally heat the film above 900°C, causing rapid nitrogen effusion. Excess gallium is then removed by conventional etching. At exposures of 0.4 J/cm2 with 355 nm light, etch rates of 50-70 nm per pulse were obtained. Illumination with an interference grating was used to produce trenches as narrow as 100 nm.

AB - Patterned etching of GaN films was achieved with laser-induced thermal decomposition. High-energy laser pulses are used to locally heat the film above 900°C, causing rapid nitrogen effusion. Excess gallium is then removed by conventional etching. At exposures of 0.4 J/cm2 with 355 nm light, etch rates of 50-70 nm per pulse were obtained. Illumination with an interference grating was used to produce trenches as narrow as 100 nm.

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U2 - 10.1063/1.117473

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SN - 0003-6951

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JO - Applied Physics Letters

JF - Applied Physics Letters

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Optical patterning of GaN films

Abstract

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