Optical control of internal electric fields in band gap-graded InGaN nanowires

N. Erhard, A. T.M.Golam Sarwar, F. Yang, D. W. McComb, R. C. Myers, A. W. Holleitner

Research output: Contribution to journalArticlepeer-review

25 Scopus citations


InGaN nanowires are suitable building blocks for many future optoelectronic devices. We show that a linear grading of the indium content along the nanowire axis from GaN to InN introduces an internal electric field evoking a photocurrent. Consistent with quantitative band structure simulations we observe a sign change in the measured photocurrent as a function of photon flux. This negative differential photocurrent opens the path to a new type of nanowire-based photodetector. We demonstrate that the photocurrent response of the nanowires is as fast as 1.5 ps.

Original languageEnglish
Pages (from-to)332-338
Number of pages7
JournalNano Letters
Issue number1
StatePublished - 14 Jan 2015


  • InGaN nanowire
  • band structure
  • photodetector
  • ultrafast photocurrent


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