Optical characterization of AlGaN/GaN quantum disc structures in single nanowires

L. Rigutti; F. Fortuna; M. Tchernycheva; A. De Luna Bugallo; G. Jacopin; F. H. Julien; F. Furtmayr; M. Stutzmann; M. Eickhoff

doi:10.1002/pssc.200983513

Optical characterization of AlGaN/GaN quantum disc structures in single nanowires

L. Rigutti, F. Fortuna, M. Tchernycheva, A. De Luna Bugallo, G. Jacopin, F. H. Julien, F. Furtmayr, M. Stutzmann, M. Eickhoff

TUM Emeriti of Excellence

Research output: Contribution to journal › Conference article › peer-review

Abstract

We report a systematic study of the luminescence properties of Al _xGa_1-xN/GaN single and multi quantum disc structures in single nanowires with Al fraction x_Al varying from 0.05 to 1. These quantum structures are situated on the top of GaN nanowires grown in the polar [0001] direction. Nanowires are synthesized by Plasma Assisted Molecular Beam Epitaxy under nitrogen rich growth conditions at a substrate temperature of T = 780 °C on Si (111) substrates. The PL energy of single and multiquantum disc systems is explained in terms of Al content in the barriers, band bending at the upper polar surface, and strain relaxation in the heterostructure region.

Original language	English
Pages (from-to)	2243-2245
Number of pages	3
Journal	Physica Status Solidi (C) Current Topics in Solid State Physics
Volume	7
Issue number	7-8
DOIs	https://doi.org/10.1002/pssc.200983513
State	Published - 2010
Event	8th International Conference on Nitride Semiconductors, ICNS-8 - Jeju, Korea, Republic of Duration: 18 Oct 2009 → 23 Oct 2009

Keywords

AlGaN/GaN
MBE
Nanowires
Photoluminescence

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10.1002/pssc.200983513

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title = "Optical characterization of AlGaN/GaN quantum disc structures in single nanowires",

abstract = "We report a systematic study of the luminescence properties of Al xGa1-xN/GaN single and multi quantum disc structures in single nanowires with Al fraction xAl varying from 0.05 to 1. These quantum structures are situated on the top of GaN nanowires grown in the polar [0001] direction. Nanowires are synthesized by Plasma Assisted Molecular Beam Epitaxy under nitrogen rich growth conditions at a substrate temperature of T = 780 °C on Si (111) substrates. The PL energy of single and multiquantum disc systems is explained in terms of Al content in the barriers, band bending at the upper polar surface, and strain relaxation in the heterostructure region.",

keywords = "AlGaN/GaN, MBE, Nanowires, Photoluminescence",

author = "L. Rigutti and F. Fortuna and M. Tchernycheva and {De Luna Bugallo}, A. and G. Jacopin and Julien, {F. H.} and F. Furtmayr and M. Stutzmann and M. Eickhoff",

year = "2010",

doi = "10.1002/pssc.200983513",

language = "English",

volume = "7",

pages = "2243--2245",

journal = "Physica Status Solidi (C) Current Topics in Solid State Physics",

issn = "1862-6351",

publisher = "Wiley-VCH Verlag",

number = "7-8",

note = "8th International Conference on Nitride Semiconductors, ICNS-8 ; Conference date: 18-10-2009 Through 23-10-2009",

}

TY - JOUR

T1 - Optical characterization of AlGaN/GaN quantum disc structures in single nanowires

AU - Rigutti, L.

AU - Fortuna, F.

AU - Tchernycheva, M.

AU - De Luna Bugallo, A.

AU - Jacopin, G.

AU - Julien, F. H.

AU - Furtmayr, F.

AU - Stutzmann, M.

AU - Eickhoff, M.

PY - 2010

Y1 - 2010

N2 - We report a systematic study of the luminescence properties of Al xGa1-xN/GaN single and multi quantum disc structures in single nanowires with Al fraction xAl varying from 0.05 to 1. These quantum structures are situated on the top of GaN nanowires grown in the polar [0001] direction. Nanowires are synthesized by Plasma Assisted Molecular Beam Epitaxy under nitrogen rich growth conditions at a substrate temperature of T = 780 °C on Si (111) substrates. The PL energy of single and multiquantum disc systems is explained in terms of Al content in the barriers, band bending at the upper polar surface, and strain relaxation in the heterostructure region.

AB - We report a systematic study of the luminescence properties of Al xGa1-xN/GaN single and multi quantum disc structures in single nanowires with Al fraction xAl varying from 0.05 to 1. These quantum structures are situated on the top of GaN nanowires grown in the polar [0001] direction. Nanowires are synthesized by Plasma Assisted Molecular Beam Epitaxy under nitrogen rich growth conditions at a substrate temperature of T = 780 °C on Si (111) substrates. The PL energy of single and multiquantum disc systems is explained in terms of Al content in the barriers, band bending at the upper polar surface, and strain relaxation in the heterostructure region.

KW - AlGaN/GaN

KW - MBE

KW - Nanowires

KW - Photoluminescence

UR - http://www.scopus.com/inward/record.url?scp=77955828696&partnerID=8YFLogxK

U2 - 10.1002/pssc.200983513

DO - 10.1002/pssc.200983513

M3 - Conference article

AN - SCOPUS:77955828696

SN - 1862-6351

VL - 7

SP - 2243

EP - 2245

JO - Physica Status Solidi (C) Current Topics in Solid State Physics

JF - Physica Status Solidi (C) Current Topics in Solid State Physics

IS - 7-8

T2 - 8th International Conference on Nitride Semiconductors, ICNS-8

Y2 - 18 October 2009 through 23 October 2009

ER -

Optical characterization of AlGaN/GaN quantum disc structures in single nanowires

Abstract

Keywords

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