Optical and electrical properties of amorphous silicon-oxide with visible room temperature photoluminescence

M. C. Rossi; M. S. Brandt; M. Stutzmann

doi:10.1016/0169-4332(96)00073-6

Optical and electrical properties of amorphous silicon-oxide with visible room temperature photoluminescence

M. C. Rossi, M. S. Brandt, M. Stutzmann

TUM Emeriti of Excellence

Research output: Contribution to journal › Article › peer-review

8 Scopus citations

Abstract

A detailed study on optical and electrical properties of hydrogenated amorphous silicon-oxygen alloys prepared by rf glow discharge is presented. Changing the oxygen content from 20% to 50% allows the tuning of both the optical gap and the photoemission wavelength while keeping device quality electronic properties.

Original language	English
Pages (from-to)	323-326
Number of pages	4
Journal	Applied Surface Science
Volume	102
DOIs	https://doi.org/10.1016/0169-4332(96)00073-6
State	Published - Aug 1996

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@article{0841d5a1613c4863adddc816d87273b4,

title = "Optical and electrical properties of amorphous silicon-oxide with visible room temperature photoluminescence",

abstract = "A detailed study on optical and electrical properties of hydrogenated amorphous silicon-oxygen alloys prepared by rf glow discharge is presented. Changing the oxygen content from 20% to 50% allows the tuning of both the optical gap and the photoemission wavelength while keeping device quality electronic properties.",

author = "Rossi, {M. C.} and Brandt, {M. S.} and M. Stutzmann",

year = "1996",

month = aug,

doi = "10.1016/0169-4332(96)00073-6",

language = "English",

volume = "102",

pages = "323--326",

journal = "Applied Surface Science",

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T1 - Optical and electrical properties of amorphous silicon-oxide with visible room temperature photoluminescence

AU - Rossi, M. C.

AU - Brandt, M. S.

AU - Stutzmann, M.

PY - 1996/8

Y1 - 1996/8

N2 - A detailed study on optical and electrical properties of hydrogenated amorphous silicon-oxygen alloys prepared by rf glow discharge is presented. Changing the oxygen content from 20% to 50% allows the tuning of both the optical gap and the photoemission wavelength while keeping device quality electronic properties.

AB - A detailed study on optical and electrical properties of hydrogenated amorphous silicon-oxygen alloys prepared by rf glow discharge is presented. Changing the oxygen content from 20% to 50% allows the tuning of both the optical gap and the photoemission wavelength while keeping device quality electronic properties.

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U2 - 10.1016/0169-4332(96)00073-6

DO - 10.1016/0169-4332(96)00073-6

M3 - Article

AN - SCOPUS:0030564843

SN - 0169-4332

VL - 102

SP - 323

EP - 326

JO - Applied Surface Science

JF - Applied Surface Science

ER -

Optical and electrical properties of amorphous silicon-oxide with visible room temperature photoluminescence

Abstract

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