Operating Principle of Dual Collector Magnetotransistors Studied by Two-Dimensional Simulation

Concetta Riccobene, Gerhard Wachutka, Henry Baltes, Josef Bürgler

Research output: Contribution to journalArticlepeer-review

24 Scopus citations


Dual collector magnetotransistors are magnetic- field-sensitive devices currently developed in several laboratories. Optimized sensor design is often attempted by trial and error rather than by established design rules. This motivated the present comprehensive study of the operation of magnetotransistors by accurate two-dimensional numerical simulations. We model vertical and lateral transistors as obtained by industrial IC technology on the basis of data provided by the chip manufacturer. We consider the entire device structure with the full, complex device geometry, and the physically proper boundary conditions. Our simulations reveal the details, controversial hitherto, of the operating principle of these devices. In particular we find that, in the case of the vertical transistor, it is essentially the emitter injection modulation effect which dominates the sensor response. In the case of the lateral transistor, the magnetic sensitivity is predominantly determined by minority-carrier deflection, though side effects are involved as well. By variation of the doping profile and the device geometry we derive rules for optimized magnetotransistor design.

Original languageEnglish
Pages (from-to)1136-1148
Number of pages13
JournalIEEE Transactions on Electron Devices
Issue number7
StatePublished - Jul 1994
Externally publishedYes


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