One-step transfer printing of patterned nanogap electrodes

Kai B. Saller; Hubert Riedl; Paolo Lugli; Gregor Koblmüller; Marc Tornow

doi:10.1116/1.5100560

One-step transfer printing of patterned nanogap electrodes

Kai B. Saller, Hubert Riedl, Paolo Lugli, Gregor Koblmüller, Marc Tornow

Associate Professorship of Molekularelektronik

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

Direct printing of nanogap-separated metallic contact pairs is described that enables novel nanoelectronic device architectures. Nanotransfer printing (nTP) stamps are grown by molecular beam epitaxy involving layered III-V semiconductors that are selectively etched. Finished stamps comprise both the nanoscale surface trench that becomes the nanogap on printing and a microscale, predetermined geometry that affords the simultaneous integration of contact pads for external electrical testing. This nTP technique is well suited for top-contacting sensitive thin films for electrical characterization; a typical electrode configuration is illustrated by transfer-printed 13 nm thin metal films that are separated by an electrically insulating gap of ca. 30 nm.

Original language	English
Article number	040602
Journal	Journal of Vacuum Science and Technology B
Volume	37
Issue number	4
DOIs	https://doi.org/10.1116/1.5100560
State	Published - 1 Jul 2019

Access to Document

10.1116/1.5100560

Cite this

@article{ed064364cc0d4ad789ae226458b1fd7a,

title = "One-step transfer printing of patterned nanogap electrodes",

abstract = "Direct printing of nanogap-separated metallic contact pairs is described that enables novel nanoelectronic device architectures. Nanotransfer printing (nTP) stamps are grown by molecular beam epitaxy involving layered III-V semiconductors that are selectively etched. Finished stamps comprise both the nanoscale surface trench that becomes the nanogap on printing and a microscale, predetermined geometry that affords the simultaneous integration of contact pads for external electrical testing. This nTP technique is well suited for top-contacting sensitive thin films for electrical characterization; a typical electrode configuration is illustrated by transfer-printed 13 nm thin metal films that are separated by an electrically insulating gap of ca. 30 nm.",

author = "Saller, {Kai B.} and Hubert Riedl and Paolo Lugli and Gregor Koblm{\"u}ller and Marc Tornow",

note = "Publisher Copyright: {\textcopyright} 2019 Author(s).",

year = "2019",

month = jul,

day = "1",

doi = "10.1116/1.5100560",

language = "English",

volume = "37",

journal = "Journal of Vacuum Science and Technology B",

issn = "2166-2746",

publisher = "AVS Science and Technology Society",

number = "4",

}

TY - JOUR

T1 - One-step transfer printing of patterned nanogap electrodes

AU - Saller, Kai B.

AU - Riedl, Hubert

AU - Lugli, Paolo

AU - Koblmüller, Gregor

AU - Tornow, Marc

PY - 2019/7/1

Y1 - 2019/7/1

N2 - Direct printing of nanogap-separated metallic contact pairs is described that enables novel nanoelectronic device architectures. Nanotransfer printing (nTP) stamps are grown by molecular beam epitaxy involving layered III-V semiconductors that are selectively etched. Finished stamps comprise both the nanoscale surface trench that becomes the nanogap on printing and a microscale, predetermined geometry that affords the simultaneous integration of contact pads for external electrical testing. This nTP technique is well suited for top-contacting sensitive thin films for electrical characterization; a typical electrode configuration is illustrated by transfer-printed 13 nm thin metal films that are separated by an electrically insulating gap of ca. 30 nm.

AB - Direct printing of nanogap-separated metallic contact pairs is described that enables novel nanoelectronic device architectures. Nanotransfer printing (nTP) stamps are grown by molecular beam epitaxy involving layered III-V semiconductors that are selectively etched. Finished stamps comprise both the nanoscale surface trench that becomes the nanogap on printing and a microscale, predetermined geometry that affords the simultaneous integration of contact pads for external electrical testing. This nTP technique is well suited for top-contacting sensitive thin films for electrical characterization; a typical electrode configuration is illustrated by transfer-printed 13 nm thin metal films that are separated by an electrically insulating gap of ca. 30 nm.

UR - http://www.scopus.com/inward/record.url?scp=85068172872&partnerID=8YFLogxK

U2 - 10.1116/1.5100560

DO - 10.1116/1.5100560

M3 - Article

AN - SCOPUS:85068172872

SN - 2166-2746

VL - 37

JO - Journal of Vacuum Science and Technology B

JF - Journal of Vacuum Science and Technology B

IS - 4

M1 - 040602

ER -

One-step transfer printing of patterned nanogap electrodes

Abstract

Access to Document

Other files and links

Fingerprint

Cite this