One-dimensional transport of electrons in Si/Si0.7Ge0.3 heterostructures

M. Holzmann; D. Többen; G. Abstreiter; M. Wendel; H. Lorenz; J. P. Kotthaus; F. Schäffler

doi:10.1063/1.113437

One-dimensional transport of electrons in Si/Si_0.7Ge_0.3 heterostructures

M. Holzmann, D. Többen, G. Abstreiter, M. Wendel, H. Lorenz, J. P. Kotthaus, F. Schäffler

TUM Emeriti of Excellence

Research output: Contribution to journal › Article › peer-review

14 Scopus citations

Abstract

Magnetotransport of high-mobility electrons in quasi-one-dimensional quantum wires in Si/Si_0.7Ge_0.3 heterostructures is studied. Arrays of shallow and deep etched wires with a period of 480 nm are defined by laser holography and patterned by reactive ion etching. Typical features of transport in narrow electron channels, such as oscillations due to the depopulation of quasi-one-dimensional subbands and an anomalous resistance maximum at low magnetic fields are observed. The narrowest channels have an effective width of ≈70 nm and a sublevel spacing of 1 meV.

Original language	English
Pages (from-to)	833
Number of pages	1
Journal	Applied Physics Letters
DOIs	https://doi.org/10.1063/1.113437
State	Published - 1995

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title = "One-dimensional transport of electrons in Si/Si0.7Ge0.3 heterostructures",

abstract = "Magnetotransport of high-mobility electrons in quasi-one-dimensional quantum wires in Si/Si0.7Ge0.3 heterostructures is studied. Arrays of shallow and deep etched wires with a period of 480 nm are defined by laser holography and patterned by reactive ion etching. Typical features of transport in narrow electron channels, such as oscillations due to the depopulation of quasi-one-dimensional subbands and an anomalous resistance maximum at low magnetic fields are observed. The narrowest channels have an effective width of ≈70 nm and a sublevel spacing of 1 meV.",

author = "M. Holzmann and D. T{\"o}bben and G. Abstreiter and M. Wendel and H. Lorenz and Kotthaus, {J. P.} and F. Sch{\"a}ffler",

year = "1995",

doi = "10.1063/1.113437",

language = "English",

pages = "833",

journal = "Applied Physics Letters",

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T1 - One-dimensional transport of electrons in Si/Si0.7Ge0.3 heterostructures

AU - Holzmann, M.

AU - Többen, D.

AU - Abstreiter, G.

AU - Wendel, M.

AU - Lorenz, H.

AU - Kotthaus, J. P.

AU - Schäffler, F.

PY - 1995

Y1 - 1995

N2 - Magnetotransport of high-mobility electrons in quasi-one-dimensional quantum wires in Si/Si0.7Ge0.3 heterostructures is studied. Arrays of shallow and deep etched wires with a period of 480 nm are defined by laser holography and patterned by reactive ion etching. Typical features of transport in narrow electron channels, such as oscillations due to the depopulation of quasi-one-dimensional subbands and an anomalous resistance maximum at low magnetic fields are observed. The narrowest channels have an effective width of ≈70 nm and a sublevel spacing of 1 meV.

AB - Magnetotransport of high-mobility electrons in quasi-one-dimensional quantum wires in Si/Si0.7Ge0.3 heterostructures is studied. Arrays of shallow and deep etched wires with a period of 480 nm are defined by laser holography and patterned by reactive ion etching. Typical features of transport in narrow electron channels, such as oscillations due to the depopulation of quasi-one-dimensional subbands and an anomalous resistance maximum at low magnetic fields are observed. The narrowest channels have an effective width of ≈70 nm and a sublevel spacing of 1 meV.

UR - http://www.scopus.com/inward/record.url?scp=36449007802&partnerID=8YFLogxK

U2 - 10.1063/1.113437

DO - 10.1063/1.113437

M3 - Article

AN - SCOPUS:36449007802

SN - 0003-6951

SP - 833

JO - Applied Physics Letters

JF - Applied Physics Letters

ER -

One-dimensional transport of electrons in Si/Si_0.7Ge_0.3 heterostructures

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