@inproceedings{d5efe43450b1473db293c2a91e8cb3ad,
title = "On the Resiliency of NC-FinFET SRAMs against Variation: MFIS Structure",
abstract = "This work investigates, for the first time, the impact of different variability sources on the reliability of SRAMs implemented using the Negative Capacitance FinFET (NC-FinFET) technology in comparison to the baseline conventional FinFET technology. Unlike the existing state of the art, our investigation is for NC-FinFETs constructed in a Metal-Ferroelectric-Insulator-Semiconductor (MFIS) structure. Our analysis is based on calibrated TCAD simulations in which baseline FinFETs are calibrated to reproduce Intel 14nm measurements for both I-V characteristics and variation. NC parameters were extracted by fitting the Landau model to an experimentally-measured S shaped polarization-electric field curve. Our key focus is on revealing the individual and combined impact of variability sources on the noise margins of SRAMs. We demonstrate that NC-FinFETs based SRAMs exhibit a higher immunity against variation due to the better electrostatic integrity caused by NC.",
keywords = "NC-FinFET, Reliability., SRAM, Variability",
author = "Aniket Gupta and Nitanshu Chauhan and Om Prakash and Hussam Amrouch",
note = "Publisher Copyright: {\textcopyright} 2021 IEEE.; 26th International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2021 ; Conference date: 27-09-2021 Through 29-09-2021",
year = "2021",
month = sep,
day = "27",
doi = "10.1109/SISPAD54002.2021.9592576",
language = "English",
series = "International Conference on Simulation of Semiconductor Processes and Devices, SISPAD",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "85--88",
booktitle = "SISPAD 2021 - 2021 International Conference on Simulation of Semiconductor Processes and Devices, Proceedings",
}