ON THE PERFORMANCE AND STABILITY OF a-Si:H CELLS WITH P-I-N STRUCTURE.

G. Mueck, N. Kniffler, M. Simon, G. Mueller, G. Winterling

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

The degradation behaviour of three different types of photovoltaic p-i-n junctions is compared. The cells were degraded both in the open circuit condition under simulated AM1 illumination and by applying forward bias in the dark. Both methods yield comparable results and indicate that optimum cell stability can be reached by (i) using deposition conditions which reduce the incorporation of hydrogen into the i-layer and by (ii) illuminating the cells through the p-layer. We further compare the efficiency of the cells under typical operating conditions and discuss which type of cell exhibits the greatest potential of yielding both stable and efficient cells.

Original languageEnglish
Title of host publicationCommission of the European Communities, (Report) EUR
PublisherD. Reidel Publ Co
Pages723-727
Number of pages5
ISBN (Print)9027717249
StatePublished - 1984
Externally publishedYes

Publication series

NameCommission of the European Communities, (Report) EUR

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