Abstract
An array test structure for precise characterization of the matching behavior of MOSFETs is presented. Besides the standard mismatch parameter drain current ID, the high resolution measurement principle allows the characterization of the small signal parameters transconductance gm and in particular differential output conductance gDS. Measured data are shown to demonstrate the performance of the method. Whereas for the normalized standard deviations of ID and gm the well known proportionality to (WL)- 1/2 is obtained, the normalized standard deviation of gDS clearly deviates from this width and length dependence. For this parameter, a proportionality to W- 1/2 is found.
Original language | English |
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Pages | 137-141 |
Number of pages | 5 |
State | Published - 2000 |
Externally published | Yes |
Event | ICMTS 2000 - The International Conference on Microelectronic Test Structures - Monterey, CA, USA Duration: 13 Mar 2000 → 16 Mar 2000 |
Conference
Conference | ICMTS 2000 - The International Conference on Microelectronic Test Structures |
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City | Monterey, CA, USA |
Period | 13/03/00 → 16/03/00 |