On the matching behavior of MOSFET small signal parameters

Roland Thewes, Carsten Linnenbank, Ute Kollmer, Stefan Burges, Michelle DiLeo, Miriam Clincy, Ulrich Schaper, Ralf Brederlow, Rudolf Seibert, Werner Weber

Research output: Contribution to conferencePaperpeer-review

12 Scopus citations

Abstract

An array test structure for precise characterization of the matching behavior of MOSFETs is presented. Besides the standard mismatch parameter drain current ID, the high resolution measurement principle allows the characterization of the small signal parameters transconductance gm and in particular differential output conductance gDS. Measured data are shown to demonstrate the performance of the method. Whereas for the normalized standard deviations of ID and gm the well known proportionality to (WL)- 1/2 is obtained, the normalized standard deviation of gDS clearly deviates from this width and length dependence. For this parameter, a proportionality to W- 1/2 is found.

Original languageEnglish
Pages137-141
Number of pages5
StatePublished - 2000
Externally publishedYes
EventICMTS 2000 - The International Conference on Microelectronic Test Structures - Monterey, CA, USA
Duration: 13 Mar 200016 Mar 2000

Conference

ConferenceICMTS 2000 - The International Conference on Microelectronic Test Structures
CityMonterey, CA, USA
Period13/03/0016/03/00

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