On the degradation of P-MOSFETS in analog and RF circuits under inhomogeneous negative bias temperature stress

Christian Schlünder; Ralf Brederlow; Benno Ankele; Arnulf Lill; Karl Goser; Roland Thewes

On the degradation of P-MOSFETS in analog and RF circuits under inhomogeneous negative bias temperature stress

Christian Schlünder
, Ralf Brederlow
, Benno Ankele
, Arnulf Lill
, Karl Goser
, Roland Thewes

Infineon Technologies AG
Infineon Technologies AG, Austria
pro3dure medical GmbH

Research output: Contribution to journal › Conference article › peer-review

18 Scopus citations

Abstract

The effect of inhomogeneous Negative Bias Temperature Stress (NBTS) applied to p-MOS transistors under analog and RF CMOS operating conditions is investigated. Experimental data of a 0.18 μm standard CMOS process are presented and an analytical model is derived to physically explain the effect of stress on the device characteristics. The impact of inhomogeneous NBTS on device lifetime is considered and compared to the homogeneous case.

Original language	English
Pages (from-to)	5-10
Number of pages	6
Journal	Annual Proceedings - Reliability Physics (Symposium)
State	Published - 2003
Externally published	Yes
Event	2003 IEEE International Reliability Physics Symposium Proceedings - Dallas, TX, United States Duration: 30 Mar 2003 → 4 Apr 2003

Cite this

@article{b462142e81004f5d9baca276144eda33,

title = "On the degradation of P-MOSFETS in analog and RF circuits under inhomogeneous negative bias temperature stress",

abstract = "The effect of inhomogeneous Negative Bias Temperature Stress (NBTS) applied to p-MOS transistors under analog and RF CMOS operating conditions is investigated. Experimental data of a 0.18 μm standard CMOS process are presented and an analytical model is derived to physically explain the effect of stress on the device characteristics. The impact of inhomogeneous NBTS on device lifetime is considered and compared to the homogeneous case.",

author = "Christian Schl{\"u}nder and Ralf Brederlow and Benno Ankele and Arnulf Lill and Karl Goser and Roland Thewes",

year = "2003",

language = "English",

pages = "5--10",

journal = "Annual Proceedings - Reliability Physics (Symposium)",

issn = "0099-9512",

note = "2003 IEEE International Reliability Physics Symposium Proceedings ; Conference date: 30-03-2003 Through 04-04-2003",

}

TY - JOUR

T1 - On the degradation of P-MOSFETS in analog and RF circuits under inhomogeneous negative bias temperature stress

AU - Schlünder, Christian

AU - Brederlow, Ralf

AU - Ankele, Benno

AU - Lill, Arnulf

AU - Goser, Karl

AU - Thewes, Roland

PY - 2003

Y1 - 2003

N2 - The effect of inhomogeneous Negative Bias Temperature Stress (NBTS) applied to p-MOS transistors under analog and RF CMOS operating conditions is investigated. Experimental data of a 0.18 μm standard CMOS process are presented and an analytical model is derived to physically explain the effect of stress on the device characteristics. The impact of inhomogeneous NBTS on device lifetime is considered and compared to the homogeneous case.

AB - The effect of inhomogeneous Negative Bias Temperature Stress (NBTS) applied to p-MOS transistors under analog and RF CMOS operating conditions is investigated. Experimental data of a 0.18 μm standard CMOS process are presented and an analytical model is derived to physically explain the effect of stress on the device characteristics. The impact of inhomogeneous NBTS on device lifetime is considered and compared to the homogeneous case.

UR - https://www.scopus.com/pages/publications/0037660903

M3 - Conference article

AN - SCOPUS:0037660903

SN - 0099-9512

SP - 5

EP - 10

JO - Annual Proceedings - Reliability Physics (Symposium)

JF - Annual Proceedings - Reliability Physics (Symposium)

T2 - 2003 IEEE International Reliability Physics Symposium Proceedings

Y2 - 30 March 2003 through 4 April 2003

ER -

On the degradation of P-MOSFETS in analog and RF circuits under inhomogeneous negative bias temperature stress

Abstract

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