On the degradation of P-mosfets in analog and RF circuits under inhomogeneous Negative Bias Temperature Stress

Christian Schlünder; Raif Brederlow; Benno Ankele; Arnulf Lill; Karl Goser; Roland Thewes

doi:10.1109/RELPHY.2003.1197712

On the degradation of P-mosfets in analog and RF circuits under inhomogeneous Negative Bias Temperature Stress

Christian Schlünder, Raif Brederlow, Benno Ankele, Arnulf Lill, Karl Goser, Roland Thewes

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

10 Scopus citations

Abstract

The effect of inhomogeneous Negative Bias. Temperature Stress (NBTS) applied to p-MOS transistors under analog and RF CMOS operating conditions is investigated. Experimental data of a 0.18 urn standard CMOS process are presented and an analytical model is derived to physically explain the effect of stress on the device characteristics. The impact of inhomogeneous NBTS on device lifetime is considered and compared to the homogeneous case.

Original language	English
Title of host publication	2003 IEEE International Reliability Physics Symposium Proceedings, IRPS 2003 - 41st Annual
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	5-10
Number of pages	6
ISBN (Electronic)	0780376498
DOIs	https://doi.org/10.1109/RELPHY.2003.1197712
State	Published - 2003
Externally published	Yes
Event	2003 41st Annual IEEE International Reliability Physics Symposium, IRPS 2003 - Dallas, United States Duration: 30 Mar 2003 → 4 Apr 2003

Publication series

Name	IEEE International Reliability Physics Symposium Proceedings
Volume	2003-January
ISSN (Print)	1541-7026

Conference

Conference	2003 41st Annual IEEE International Reliability Physics Symposium, IRPS 2003
Country/Territory	United States
City	Dallas
Period	30/03/03 → 4/04/03

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10.1109/RELPHY.2003.1197712

Cite this

Schlünder, C., Brederlow, R., Ankele, B., Lill, A., Goser, K., & Thewes, R. (2003). On the degradation of P-mosfets in analog and RF circuits under inhomogeneous Negative Bias Temperature Stress. In 2003 IEEE International Reliability Physics Symposium Proceedings, IRPS 2003 - 41st Annual (pp. 5-10). Article 1197712 (IEEE International Reliability Physics Symposium Proceedings; Vol. 2003-January). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/RELPHY.2003.1197712

Schlünder, Christian ; Brederlow, Raif ; Ankele, Benno et al. / On the degradation of P-mosfets in analog and RF circuits under inhomogeneous Negative Bias Temperature Stress. 2003 IEEE International Reliability Physics Symposium Proceedings, IRPS 2003 - 41st Annual. Institute of Electrical and Electronics Engineers Inc., 2003. pp. 5-10 (IEEE International Reliability Physics Symposium Proceedings).

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title = "On the degradation of P-mosfets in analog and RF circuits under inhomogeneous Negative Bias Temperature Stress",

abstract = "The effect of inhomogeneous Negative Bias. Temperature Stress (NBTS) applied to p-MOS transistors under analog and RF CMOS operating conditions is investigated. Experimental data of a 0.18 urn standard CMOS process are presented and an analytical model is derived to physically explain the effect of stress on the device characteristics. The impact of inhomogeneous NBTS on device lifetime is considered and compared to the homogeneous case.",

author = "Christian Schl{\"u}nder and Raif Brederlow and Benno Ankele and Arnulf Lill and Karl Goser and Roland Thewes",

note = "Publisher Copyright: {\textcopyright} 2003 IEEE.; 2003 41st Annual IEEE International Reliability Physics Symposium, IRPS 2003 ; Conference date: 30-03-2003 Through 04-04-2003",

year = "2003",

doi = "10.1109/RELPHY.2003.1197712",

language = "English",

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Schlünder, C, Brederlow, R, Ankele, B, Lill, A, Goser, K & Thewes, R 2003, On the degradation of P-mosfets in analog and RF circuits under inhomogeneous Negative Bias Temperature Stress. in 2003 IEEE International Reliability Physics Symposium Proceedings, IRPS 2003 - 41st Annual., 1197712, IEEE International Reliability Physics Symposium Proceedings, vol. 2003-January, Institute of Electrical and Electronics Engineers Inc., pp. 5-10, 2003 41st Annual IEEE International Reliability Physics Symposium, IRPS 2003, Dallas, United States, 30/03/03. https://doi.org/10.1109/RELPHY.2003.1197712

On the degradation of P-mosfets in analog and RF circuits under inhomogeneous Negative Bias Temperature Stress. / Schlünder, Christian; Brederlow, Raif; Ankele, Benno et al.
2003 IEEE International Reliability Physics Symposium Proceedings, IRPS 2003 - 41st Annual. Institute of Electrical and Electronics Engineers Inc., 2003. p. 5-10 1197712 (IEEE International Reliability Physics Symposium Proceedings; Vol. 2003-January).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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AB - The effect of inhomogeneous Negative Bias. Temperature Stress (NBTS) applied to p-MOS transistors under analog and RF CMOS operating conditions is investigated. Experimental data of a 0.18 urn standard CMOS process are presented and an analytical model is derived to physically explain the effect of stress on the device characteristics. The impact of inhomogeneous NBTS on device lifetime is considered and compared to the homogeneous case.

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Schlünder C, Brederlow R, Ankele B, Lill A, Goser K, Thewes R. On the degradation of P-mosfets in analog and RF circuits under inhomogeneous Negative Bias Temperature Stress. In 2003 IEEE International Reliability Physics Symposium Proceedings, IRPS 2003 - 41st Annual. Institute of Electrical and Electronics Engineers Inc. 2003. p. 5-10. 1197712. (IEEE International Reliability Physics Symposium Proceedings). doi: 10.1109/RELPHY.2003.1197712

On the degradation of P-mosfets in analog and RF circuits under inhomogeneous Negative Bias Temperature Stress

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