TY - JOUR
T1 - On-chip Extraordinary Hall-effect sensors for characterization of nanomagnetic logic devices
AU - Becherer, M.
AU - Kiermaier, J.
AU - Breitkreutz, S.
AU - Csaba, G.
AU - Ju, X.
AU - Rezgani, J.
AU - Kießling, T.
AU - Yilmaz, C.
AU - Osswald, P.
AU - Lugli, P.
AU - Schmitt-Landsiedel, D.
PY - 2010/9
Y1 - 2010/9
N2 - Ferromagnetic Co/Pt films and single-domain magnets are characterized by various types of Extraordinary Hall-Effect (EHE) sensors. The magnetron sputtered multilayer films are annealed and measured in the temperature range of 22 °C ≤ T ≤ 75 °C. By focused ion beam (FIB) irradiation, the magnetic properties of the Co/Pt stack are tailored to define both the switching field and the geometry of nanomagnetic single domain dots. A submicron sized EHE-sensor for read-out of field-coupled computing devices is presented. The applied sensing structure is suitable to electrically probe the output states of field-coupled magnetic logic gates. Furthermore, it reveals details on the magnetic properties of submicron-scale single-domain dots and the main measured features are confirmed by micromagnetic simulations. A 'split-current' architecture is chosen, where Hall sensing takes place in a single lateral direction, in order to keep field-coupling to adjacent nanomagnets undisturbed. From angular measurements we conclude that the reversal mechanism of the FIB patterned magnetic dots is domain-wall driven. The sensor is a main component needed for integration of nanomagnetic computing units embedded into microelectronic systems.
AB - Ferromagnetic Co/Pt films and single-domain magnets are characterized by various types of Extraordinary Hall-Effect (EHE) sensors. The magnetron sputtered multilayer films are annealed and measured in the temperature range of 22 °C ≤ T ≤ 75 °C. By focused ion beam (FIB) irradiation, the magnetic properties of the Co/Pt stack are tailored to define both the switching field and the geometry of nanomagnetic single domain dots. A submicron sized EHE-sensor for read-out of field-coupled computing devices is presented. The applied sensing structure is suitable to electrically probe the output states of field-coupled magnetic logic gates. Furthermore, it reveals details on the magnetic properties of submicron-scale single-domain dots and the main measured features are confirmed by micromagnetic simulations. A 'split-current' architecture is chosen, where Hall sensing takes place in a single lateral direction, in order to keep field-coupling to adjacent nanomagnets undisturbed. From angular measurements we conclude that the reversal mechanism of the FIB patterned magnetic dots is domain-wall driven. The sensor is a main component needed for integration of nanomagnetic computing units embedded into microelectronic systems.
KW - Co/Pt multilayer
KW - Extraordinary Hall-Effect
KW - Ferromagnetic computing
KW - Field-coupled logic
KW - Magnetic QCA
UR - http://www.scopus.com/inward/record.url?scp=77954219701&partnerID=8YFLogxK
U2 - 10.1016/j.sse.2010.04.011
DO - 10.1016/j.sse.2010.04.011
M3 - Article
AN - SCOPUS:77954219701
SN - 0038-1101
VL - 54
SP - 1027
EP - 1032
JO - Solid-State Electronics
JF - Solid-State Electronics
IS - 9
ER -