ODMR of bound excitons in Mg-doped GaN

M. W. Bayerl; M. S. Brandt; T. Suski; I. Grzegory; S. Porowski; M. Stutzmann

doi:10.1016/S0921-4526(99)00421-4

ODMR of bound excitons in Mg-doped GaN

M. W. Bayerl, M. S. Brandt, T. Suski, I. Grzegory, S. Porowski, M. Stutzmann

TUM Emeriti of Excellence

Research output: Contribution to journal › Conference article › peer-review

9 Scopus citations

Abstract

GaN bulk crystals compensated with Mg exhibit a strong yellow photoluminescence (PL) band. However, optically detected magnetic resonance (ODMR) experiments show that the microscopic origin of this luminescence is completely different from the one observed in n-type GaN. The ODMR spectra of GaN:Mg bulk crystals are dominated by a fine-structure-split pair of lines. At magnetic field orientations between 45 and 60° from the c-axis, additional substructure on these peaks is resolved, characterized by a splitting of 14 mT, and tentatively assigned to a superhyperfine interaction. Additionally a half-field resonance split by 50 up to 70 mT is detected. The spectra are described by an electron-hole pair located at a close donor-acceptor pair. Axial donor and acceptor g-values of g_e∥ = g_e⊥ = 1.83, g_h∥ = 2.18, and g_h⊥ = 2.22 are found. The exchange interaction can be described by an axial fine-structure tensor with D_∥ = 0.18 cm^-1 and D_⊥ = 0.09 cm^-1.

Original language	English
Pages (from-to)	120-123
Number of pages	4
Journal	Physica B: Condensed Matter
Volume	273-274
DOIs	https://doi.org/10.1016/S0921-4526(99)00421-4
State	Published - 15 Dec 1999
Event	Proceedings of the 1999 20th International Conference on Defects in Semiconductors (ICDS-20) - Berkeley, CA, USA Duration: 26 Jul 1999 → 30 Jul 1999

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title = "ODMR of bound excitons in Mg-doped GaN",

abstract = "GaN bulk crystals compensated with Mg exhibit a strong yellow photoluminescence (PL) band. However, optically detected magnetic resonance (ODMR) experiments show that the microscopic origin of this luminescence is completely different from the one observed in n-type GaN. The ODMR spectra of GaN:Mg bulk crystals are dominated by a fine-structure-split pair of lines. At magnetic field orientations between 45 and 60° from the c-axis, additional substructure on these peaks is resolved, characterized by a splitting of 14 mT, and tentatively assigned to a superhyperfine interaction. Additionally a half-field resonance split by 50 up to 70 mT is detected. The spectra are described by an electron-hole pair located at a close donor-acceptor pair. Axial donor and acceptor g-values of ge∥ = ge⊥ = 1.83, gh∥ = 2.18, and gh⊥ = 2.22 are found. The exchange interaction can be described by an axial fine-structure tensor with D∥ = 0.18 cm-1 and D⊥ = 0.09 cm-1.",

author = "Bayerl, {M. W.} and Brandt, {M. S.} and T. Suski and I. Grzegory and S. Porowski and M. Stutzmann",

year = "1999",

month = dec,

day = "15",

doi = "10.1016/S0921-4526(99)00421-4",

language = "English",

volume = "273-274",

pages = "120--123",

journal = "Physica B: Condensed Matter",

issn = "0921-4526",

publisher = "Elsevier B.V.",

note = "Proceedings of the 1999 20th International Conference on Defects in Semiconductors (ICDS-20) ; Conference date: 26-07-1999 Through 30-07-1999",

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TY - JOUR

T1 - ODMR of bound excitons in Mg-doped GaN

AU - Bayerl, M. W.

AU - Brandt, M. S.

AU - Suski, T.

AU - Grzegory, I.

AU - Porowski, S.

AU - Stutzmann, M.

PY - 1999/12/15

Y1 - 1999/12/15

N2 - GaN bulk crystals compensated with Mg exhibit a strong yellow photoluminescence (PL) band. However, optically detected magnetic resonance (ODMR) experiments show that the microscopic origin of this luminescence is completely different from the one observed in n-type GaN. The ODMR spectra of GaN:Mg bulk crystals are dominated by a fine-structure-split pair of lines. At magnetic field orientations between 45 and 60° from the c-axis, additional substructure on these peaks is resolved, characterized by a splitting of 14 mT, and tentatively assigned to a superhyperfine interaction. Additionally a half-field resonance split by 50 up to 70 mT is detected. The spectra are described by an electron-hole pair located at a close donor-acceptor pair. Axial donor and acceptor g-values of ge∥ = ge⊥ = 1.83, gh∥ = 2.18, and gh⊥ = 2.22 are found. The exchange interaction can be described by an axial fine-structure tensor with D∥ = 0.18 cm-1 and D⊥ = 0.09 cm-1.

AB - GaN bulk crystals compensated with Mg exhibit a strong yellow photoluminescence (PL) band. However, optically detected magnetic resonance (ODMR) experiments show that the microscopic origin of this luminescence is completely different from the one observed in n-type GaN. The ODMR spectra of GaN:Mg bulk crystals are dominated by a fine-structure-split pair of lines. At magnetic field orientations between 45 and 60° from the c-axis, additional substructure on these peaks is resolved, characterized by a splitting of 14 mT, and tentatively assigned to a superhyperfine interaction. Additionally a half-field resonance split by 50 up to 70 mT is detected. The spectra are described by an electron-hole pair located at a close donor-acceptor pair. Axial donor and acceptor g-values of ge∥ = ge⊥ = 1.83, gh∥ = 2.18, and gh⊥ = 2.22 are found. The exchange interaction can be described by an axial fine-structure tensor with D∥ = 0.18 cm-1 and D⊥ = 0.09 cm-1.

UR - http://www.scopus.com/inward/record.url?scp=0033328707&partnerID=8YFLogxK

U2 - 10.1016/S0921-4526(99)00421-4

DO - 10.1016/S0921-4526(99)00421-4

M3 - Conference article

AN - SCOPUS:0033328707

SN - 0921-4526

VL - 273-274

SP - 120

EP - 123

JO - Physica B: Condensed Matter

JF - Physica B: Condensed Matter

T2 - Proceedings of the 1999 20th International Conference on Defects in Semiconductors (ICDS-20)

Y2 - 26 July 1999 through 30 July 1999

ER -

ODMR of bound excitons in Mg-doped GaN

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