Occupancy of dangling bond defects in doped hydrogenated amorphous silicon

Martin Stutzmann; Warren B. Jackson

doi:10.1016/0038-1098(87)90181-5

Occupancy of dangling bond defects in doped hydrogenated amorphous silicon

Martin Stutzmann, Warren B. Jackson

Research output: Contribution to journal › Article › peer-review

31 Scopus citations

Abstract

The occupancy of dangling bond defects in doped hydrogenated amorphous silicon is examined using a combination of electron spin resonance, sub-bandgap absorption, and transport measurements. A corrected value of U = +0.2 eV (±0.1 eV) is obtained for the dangling bond correlation energy in state-of-the-art material. The importance of potential fluctuations caused by inhomogeneous defect distributions is demonstrated for the case of boron doping in non-optimized samples.

Original language	English
Pages (from-to)	153-157
Number of pages	5
Journal	Solid State Communications
Volume	62
Issue number	3
DOIs	https://doi.org/10.1016/0038-1098(87)90181-5
State	Published - Apr 1987
Externally published	Yes

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title = "Occupancy of dangling bond defects in doped hydrogenated amorphous silicon",

abstract = "The occupancy of dangling bond defects in doped hydrogenated amorphous silicon is examined using a combination of electron spin resonance, sub-bandgap absorption, and transport measurements. A corrected value of U = +0.2 eV (±0.1 eV) is obtained for the dangling bond correlation energy in state-of-the-art material. The importance of potential fluctuations caused by inhomogeneous defect distributions is demonstrated for the case of boron doping in non-optimized samples.",

author = "Martin Stutzmann and Jackson, {Warren B.}",

year = "1987",

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T1 - Occupancy of dangling bond defects in doped hydrogenated amorphous silicon

AU - Stutzmann, Martin

AU - Jackson, Warren B.

PY - 1987/4

Y1 - 1987/4

N2 - The occupancy of dangling bond defects in doped hydrogenated amorphous silicon is examined using a combination of electron spin resonance, sub-bandgap absorption, and transport measurements. A corrected value of U = +0.2 eV (±0.1 eV) is obtained for the dangling bond correlation energy in state-of-the-art material. The importance of potential fluctuations caused by inhomogeneous defect distributions is demonstrated for the case of boron doping in non-optimized samples.

AB - The occupancy of dangling bond defects in doped hydrogenated amorphous silicon is examined using a combination of electron spin resonance, sub-bandgap absorption, and transport measurements. A corrected value of U = +0.2 eV (±0.1 eV) is obtained for the dangling bond correlation energy in state-of-the-art material. The importance of potential fluctuations caused by inhomogeneous defect distributions is demonstrated for the case of boron doping in non-optimized samples.

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U2 - 10.1016/0038-1098(87)90181-5

DO - 10.1016/0038-1098(87)90181-5

M3 - Article

AN - SCOPUS:0023325281

SN - 0038-1098

VL - 62

SP - 153

EP - 157

JO - Solid State Communications

JF - Solid State Communications

IS - 3

ER -

Occupancy of dangling bond defects in doped hydrogenated amorphous silicon

Abstract

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