Observation of tunable band gap and two-dimensional subbands in a novel GaAs superlattice

Luminescence and Raman measurements on a new type of superlattice consisting of n- and p-type doped GaAs layers grown by molecular-beam epitaxy confirm crucial predictions of theory. A strongly tunable energy gap is found in luminescence. Raman experiments provide the first observation of electronic subbands in purely space-charge-induced quantum wells. A combined analysis of the luminescence and Raman data yields excellent agreement with self-consistent subband calculations based only on the design parameters of the sample.