Observation of multicharged excitons and biexcitons in a single InGaAs quantum dot

  • J. J. Finley
  • , P. W. Fry
  • , A. D. Ashmore
  • , A. Lemaître
  • , A. I. Tartakovskii
  • , R. Oulton
  • , D. J. Mowbray
  • , M. S. Skolnick
  • , M. Hopkinson
  • , P. D. Buckle
  • , P. A. Maksym

Research output: Contribution to journalArticlepeer-review

164 Scopus citations

Abstract

The effects of excess electron occupation on the optical properties of excitons (X) and biexcitons(2X)in a single self-assembled InGaAs quantum dot are investigated. The behavior of X and 2X differ strongly as the number of excess electrons is varied with the biexciton being much more weakly perturbed as a result of its filled s-shell ground state, a direct manifestation of shell-filling effects. Good correlation is found between charging thresholds observed from s-shell recombination perturbed by p-shell occupation, and direct observation of p-shell recombination.

Original languageEnglish
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume63
Issue number16
DOIs
StatePublished - 2001
Externally publishedYes

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