Observation of multicharged excitons and biexcitons in a single InGaAs quantum dot

J. J. Finley, P. W. Fry, A. D. Ashmore, A. Lemaître, A. I. Tartakovskii, R. Oulton, D. J. Mowbray, M. S. Skolnick, M. Hopkinson, P. D. Buckle, P. A. Maksym

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Abstract

The effects of excess electron occupation on the optical properties of excitons (X) and biexcitons(2X)in a single self-assembled InGaAs quantum dot are investigated. The behavior of X and 2X differ strongly as the number of excess electrons is varied with the biexciton being much more weakly perturbed as a result of its filled s-shell ground state, a direct manifestation of shell-filling effects. Good correlation is found between charging thresholds observed from s-shell recombination perturbed by p-shell occupation, and direct observation of p-shell recombination.

Original languageEnglish
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume63
Issue number16
DOIs
StatePublished - 2001
Externally publishedYes

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