Abstract
We report a direct observation by electroluminescence (EL) spectroscopy of ballistic-electron transport in double-barrier resonant-tunneling GaAs/AlxGa1-xAs p-i-n diodes. The samples studied contain two confined electron states (e1 and e2) and consequently two resonances in the current versus bias characteristic. When biased for electron tunneling through e2, an analysis of EL intensities permits a quantitative determination of the ratio (1:16 and 1:203 for the two samples studied) of the ballistic current flowing directly through e2 to the current flowing sequentially through e1.
Original language | English |
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Pages (from-to) | 4885-4888 |
Number of pages | 4 |
Journal | Physical Review B |
Volume | 50 |
Issue number | 7 |
DOIs | |
State | Published - 1994 |
Externally published | Yes |