Observation of ballistic transport in double-barrier resonant-tunneling structures by electroluminescence spectroscopy

R. Teissier, J. W. Cockburn, P. D. Buckle, M. S. Skolnick, J. J. Finley, R. Grey, G. Hill, M. A. Pate

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Abstract

We report a direct observation by electroluminescence (EL) spectroscopy of ballistic-electron transport in double-barrier resonant-tunneling GaAs/AlxGa1-xAs p-i-n diodes. The samples studied contain two confined electron states (e1 and e2) and consequently two resonances in the current versus bias characteristic. When biased for electron tunneling through e2, an analysis of EL intensities permits a quantitative determination of the ratio (1:16 and 1:203 for the two samples studied) of the ballistic current flowing directly through e2 to the current flowing sequentially through e1.

Original languageEnglish
Pages (from-to)4885-4888
Number of pages4
JournalPhysical Review B
Volume50
Issue number7
DOIs
StatePublished - 1994
Externally publishedYes

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