Observation of an electrically tunable exciton g factor in InGaAs/GaAs quantum dots

F. Klotz; V. Jovanov; J. Kierig; E. C. Clark; D. Rudolph; D. Heiss; M. Bichler; G. Abstreiter; M. S. Brandt; J. J. Finley

doi:10.1063/1.3309684

Observation of an electrically tunable exciton g factor in InGaAs/GaAs quantum dots

F. Klotz, V. Jovanov, J. Kierig, E. C. Clark, D. Rudolph, D. Heiss, M. Bichler, G. Abstreiter, M. S. Brandt, J. J. Finley

Walter Schottky Institut

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Abstract

The electric field dependence of the exciton g factor and the fine structure splitting in self-assembled InGaAs/GaAs quantum dots grown via a flush-overgrowth technique is studied by photocurrent and photoluminescence experiments. Both the fine structure and the Zeeman splitting can be tuned over a wide range via electric fields applied in growth direction of the quantum dot. For the g factor, a tunability of 250% is demonstrated from g=0.12 to 0.42.

Original language	English
Article number	053113
Journal	Applied Physics Letters
Volume	96
Issue number	5
DOIs	https://doi.org/10.1063/1.3309684
State	Published - 2010

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abstract = "The electric field dependence of the exciton g factor and the fine structure splitting in self-assembled InGaAs/GaAs quantum dots grown via a flush-overgrowth technique is studied by photocurrent and photoluminescence experiments. Both the fine structure and the Zeeman splitting can be tuned over a wide range via electric fields applied in growth direction of the quantum dot. For the g factor, a tunability of 250% is demonstrated from g=0.12 to 0.42.",

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AU - Klotz, F.

AU - Jovanov, V.

AU - Kierig, J.

AU - Clark, E. C.

AU - Rudolph, D.

AU - Heiss, D.

AU - Bichler, M.

AU - Abstreiter, G.

AU - Brandt, M. S.

AU - Finley, J. J.

PY - 2010

Y1 - 2010

N2 - The electric field dependence of the exciton g factor and the fine structure splitting in self-assembled InGaAs/GaAs quantum dots grown via a flush-overgrowth technique is studied by photocurrent and photoluminescence experiments. Both the fine structure and the Zeeman splitting can be tuned over a wide range via electric fields applied in growth direction of the quantum dot. For the g factor, a tunability of 250% is demonstrated from g=0.12 to 0.42.

AB - The electric field dependence of the exciton g factor and the fine structure splitting in self-assembled InGaAs/GaAs quantum dots grown via a flush-overgrowth technique is studied by photocurrent and photoluminescence experiments. Both the fine structure and the Zeeman splitting can be tuned over a wide range via electric fields applied in growth direction of the quantum dot. For the g factor, a tunability of 250% is demonstrated from g=0.12 to 0.42.

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JF - Applied Physics Letters

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M1 - 053113

ER -

Observation of an electrically tunable exciton g factor in InGaAs/GaAs quantum dots

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