Abstract
Self-assembled Ge and SiGe islands, which are compact pyramids with four equivalent 105 facets, have been grown by molecular beam epitaxy on vicinal Si(001) surfaces with biatomic surface steps along the [110] direction. Revealed by atomic force microscopy, they appear as regularly facetted pyramids which are inclined by the miscut angles of 2.8° or 4° toward the sample surfaces and consequently have a distorted rhomb base. Characteristic patterns are observed by reflection high-energy electron diffraction from these facetted islands. They agree well with simulated patterns scattered by 105 facets. Avoiding elongated Ge hut clusters by using vicinal surfaces is promising for an improved homogeneity in island shape and size.
Original language | English |
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Pages (from-to) | 424-426 |
Number of pages | 3 |
Journal | Applied Physics Letters |
Volume | 72 |
Issue number | 4 |
DOIs | |
State | Published - 1998 |