Observation of 105 facetted Ge pyramids inclined towards vicinal Si(001) surfaces

Jian Hong Zhu, K. Brunner, G. Abstreiter

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Abstract

Self-assembled Ge and SiGe islands, which are compact pyramids with four equivalent 105 facets, have been grown by molecular beam epitaxy on vicinal Si(001) surfaces with biatomic surface steps along the [110] direction. Revealed by atomic force microscopy, they appear as regularly facetted pyramids which are inclined by the miscut angles of 2.8° or 4° toward the sample surfaces and consequently have a distorted rhomb base. Characteristic patterns are observed by reflection high-energy electron diffraction from these facetted islands. They agree well with simulated patterns scattered by 105 facets. Avoiding elongated Ge hut clusters by using vicinal surfaces is promising for an improved homogeneity in island shape and size.

Original languageEnglish
Pages (from-to)424-426
Number of pages3
JournalApplied Physics Letters
Volume72
Issue number4
DOIs
StatePublished - 1998

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