Numerical design study on the optimal P-emitter thickness of 4H-SIC bipolar diodes

D. Werber, G. Wachutka

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

4 Scopus citations

Abstract

Numerical device simulations show that slight extensions of the p-emitter thickness in 4H-SiC high voltage blocking bipolar pin diodes lead to a signi cant lowering of the forward voltage drop under high injection conditions at room temperature. The advantage of higher recombination currents in the enlarged p-region resulting from an enhanced excess carrier density overbalances the higher series resistance of the high-doped p-region. Both effects have their origin in the incomplete ionization of the acceptor dopants in the p-emitter. Hence, they become less signi cant at higher temperatures. A temperature dependent optimal p-emitter thickness is identi ed.

Original languageEnglish
Title of host publication2007 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2007
PublisherSpringer-Verlag Wien
Pages185-188
Number of pages4
ISBN (Print)9783211728604
DOIs
StatePublished - 2007
Event12th International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2007 - Vienna, Austria
Duration: 25 Sep 200727 Sep 2007

Publication series

Name2007 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2007

Conference

Conference12th International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2007
Country/TerritoryAustria
CityVienna
Period25/09/0727/09/07

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