@inproceedings{1b421044bfcd497eb4723b06be7e868b,
title = "Numerical analysis of destruction modes in IGBT chips",
abstract = "In IGBTs avalanche breakdown usually sets on in the edge termination structure. In consequence of electrical crosstalk, the destruction mechanism in very thin devices is confined to the neighboring cells in the active part of the chip. Thus, in order to achieve the largest possible safe-operating area, design optimization has to focus on the edge termination structure and the neighboring active cells in its vicinity.",
keywords = "Bipolar device, Discrete power device, IGBT, Reliability, Robustness",
author = "U. Knipper and F. Pfirsch and T. Raker and J. Niedermeyr and G. Wachutka",
year = "2009",
language = "English",
isbn = "9781424444328",
series = "2009 13th European Conference on Power Electronics and Applications, EPE '09",
booktitle = "2009 13th European Conference on Power Electronics and Applications, EPE '09",
note = "2009 13th European Conference on Power Electronics and Applications, EPE '09 ; Conference date: 08-09-2009 Through 10-09-2009",
}