@inproceedings{93c0c07d55374793b8cc672b80587a4e,
title = "Numerical analysis of destruction mechanisms of NPT- And FS-IGBTs in forward blocking mode",
abstract = "We studied different destruction modes of planar cell 1200V {"}Non-Punch-Through{"} and {"}Fieldstop{"} Insulated Gate Bipolar Transistors in Forward Blocking Mode using simulation tools. Branches of negative differential resistance are explained with certain device properties and a dynamic distortion of the electric field. Careful design of the device avoid these regions which may lead to current concentration and finally device destruction.",
author = "U. Knipper and G. Wachutka and F. Pfirsch and T. Raker",
year = "2006",
doi = "10.1109/SISPAD.2006.282889",
language = "English",
isbn = "1424404045",
series = "International Conference on Simulation of Semiconductor Processes and Devices, SISPAD",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "275--278",
booktitle = "2006 International Conference on Simulation of Semiconductor Process and Devices, SISPAD '06",
note = "2006 International Conference on Simulation of Semiconductor Process and Devices, SISPAD '06 ; Conference date: 06-09-2006 Through 08-09-2006",
}