Nucleation and growth of GaN nanorods on Si (111) surfaces by plasma-assisted molecular beam epitaxy - The influence of Si- and Mg-doping

Florian Furtmayr, Martin Vielemeyer, Martin Stutzmann, Jordi Arbiol, Snia Estrad́, Francesca Peir, Joan Ramon Morante, Martin Eickhoff

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Physics

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Chemical Engineering