Novel single source precursors for MOCVD of A1N, GaN and InN

Roland A. Fischer, Alexander Miehr, Oliver Ambacher, Thomas Metzger, Eberhardt Born

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36 Scopus citations


The MOCVD of AlN, GaN and InN thin films using the novel single source precursors (N3)2Ga[(CH2)3NMe2] (1), (N3)In[(CH2)3NMe2]2 (2), (N3)Al[(CH2)3NMe2]2 (3) and (N3)AlMe2(H2NtBu) (4) is reported. The compounds are non-pyrophoric. Compound 3 is air stable. No additional N-sources were used for the growth of the nitrides. We achieved epitaxial (AlN, GaN) or polycrystalline (InN) growth at least 200°C below the decomposition temperature of the respective nitride. Some aspects of the reactivity of the precursors with ammonia and the resulting influence on the deposition process were investigated.

Original languageEnglish
Pages (from-to)139-143
Number of pages5
JournalJournal of Crystal Growth
Issue number1-4
StatePublished - Jan 1997
Externally publishedYes


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