Novel relaxation process in strained Si/Ge superlattices grown on Ge (001)

W. Wegscheider; K. Eberl; G. Abstreiter; H. Cerva; H. Oppolzer

doi:10.1063/1.103375

Novel relaxation process in strained Si/Ge superlattices grown on Ge (001)

W. Wegscheider, K. Eberl, G. Abstreiter, H. Cerva, H. Oppolzer

TUM Emeriti of Excellence

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Abstract

A new mode of misfit defect formation has been observed for the first time in high quality Si/Ge strained-layer superlattices grown by molecular beam epitaxy on Ge(001). In order to investigate the transition from coherent to incoherent growth we have studied a set of samples with a varying number of superlattice periods by transmission electron microscopy. High-resolution lattice imaging reveals that strain relaxation occurs through successive glide of 90°(a/6)〈211〉 Shockley partial dislocations on adjacent {111} planes. The resulting microtwins represent the only relaxation mechanism we observed in the samples.

Original language	English
Pages (from-to)	1496-1498
Number of pages	3
Journal	Applied Physics Letters
Volume	57
Issue number	15
DOIs	https://doi.org/10.1063/1.103375
State	Published - 1990

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abstract = "A new mode of misfit defect formation has been observed for the first time in high quality Si/Ge strained-layer superlattices grown by molecular beam epitaxy on Ge(001). In order to investigate the transition from coherent to incoherent growth we have studied a set of samples with a varying number of superlattice periods by transmission electron microscopy. High-resolution lattice imaging reveals that strain relaxation occurs through successive glide of 90°(a/6)〈211〉 Shockley partial dislocations on adjacent {111} planes. The resulting microtwins represent the only relaxation mechanism we observed in the samples.",

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AU - Wegscheider, W.

AU - Eberl, K.

AU - Abstreiter, G.

AU - Cerva, H.

AU - Oppolzer, H.

PY - 1990

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AB - A new mode of misfit defect formation has been observed for the first time in high quality Si/Ge strained-layer superlattices grown by molecular beam epitaxy on Ge(001). In order to investigate the transition from coherent to incoherent growth we have studied a set of samples with a varying number of superlattice periods by transmission electron microscopy. High-resolution lattice imaging reveals that strain relaxation occurs through successive glide of 90°(a/6)〈211〉 Shockley partial dislocations on adjacent {111} planes. The resulting microtwins represent the only relaxation mechanism we observed in the samples.

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JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 15

ER -

Novel relaxation process in strained Si/Ge superlattices grown on Ge (001)

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