Novel nitride devices based on polarization fields

J. A. Majewski, G. Zandler, P. Vogl

Research output: Contribution to journalArticlepeer-review

16 Scopus citations

Abstract

A key property of the nitrides is the fact that they possess large spontaneous and piezoelectric polarization fields that allow a significant tailoring of the carrier dynamics and optical properties of nitride devices. In this paper, based on first-principles calculations of structural and electronic properties of bulk nitrides and their heterostructure, we investigate the potential of this novel material class for modern device applications by performing self-consistent Monte Carlo simulations. We demonstrate that the internal electric fields have a significant and favorable influence on the transistor characteristics.

Original languageEnglish
Pages (from-to)285-293
Number of pages9
JournalPhysica Status Solidi (A) Applied Research
Volume179
Issue number1
DOIs
StatePublished - May 2000
Externally publishedYes

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