Novel model for cell - System interaction (MCSI) in NAND flash

C. Friederich; J. Hayek; A. Kux; T. Muller; N. Chan; G. Kobernik; M. Specht; D. Richter; D. Schmitt-Landsiedel

doi:10.1109/IEDM.2008.4796826

Novel model for cell - System interaction (MCSI) in NAND flash

C. Friederich, J. Hayek, A. Kux, T. Muller, N. Chan, G. Kobernik, M. Specht, D. Richter, D. Schmitt-Landsiedel

Medicine and Health

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

17 Scopus citations

Abstract

For the first time a stochastic model of the program operation in NAND Flash memories is proposed. The model incorporates intrinsic noise effects on the threshold voltage (Vth) distribution of the memory cells in incremental step pulse programming (ISPP) schemes. An excellent agreement of the model with experimental data at 48 nm ground rule is demonstrated. This model for cell-system interaction (MCSI) directly makes the link between memory transistor properties and memory system characteristics. It enables efficient algorithm development as well as evaluation of device concepts for future technology nodes with regard to the expected memory system performance and reliability.

Original language	English
Title of host publication	2008 IEEE International Electron Devices Meeting, IEDM 2008
DOIs	https://doi.org/10.1109/IEDM.2008.4796826
State	Published - 2008
Event	2008 IEEE International Electron Devices Meeting, IEDM 2008 - San Francisco, CA, United States Duration: 15 Dec 2008 → 17 Dec 2008

Publication series

Name	Technical Digest - International Electron Devices Meeting, IEDM
ISSN (Print)	0163-1918

Conference

Conference	2008 IEEE International Electron Devices Meeting, IEDM 2008
Country/Territory	United States
City	San Francisco, CA
Period	15/12/08 → 17/12/08

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10.1109/IEDM.2008.4796826

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Friederich, C., Hayek, J., Kux, A., Muller, T., Chan, N., Kobernik, G., Specht, M., Richter, D., & Schmitt-Landsiedel, D. (2008). Novel model for cell - System interaction (MCSI) in NAND flash. In 2008 IEEE International Electron Devices Meeting, IEDM 2008 Article 4796826 (Technical Digest - International Electron Devices Meeting, IEDM). https://doi.org/10.1109/IEDM.2008.4796826

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title = "Novel model for cell - System interaction (MCSI) in NAND flash",

abstract = "For the first time a stochastic model of the program operation in NAND Flash memories is proposed. The model incorporates intrinsic noise effects on the threshold voltage (Vth) distribution of the memory cells in incremental step pulse programming (ISPP) schemes. An excellent agreement of the model with experimental data at 48 nm ground rule is demonstrated. This model for cell-system interaction (MCSI) directly makes the link between memory transistor properties and memory system characteristics. It enables efficient algorithm development as well as evaluation of device concepts for future technology nodes with regard to the expected memory system performance and reliability.",

author = "C. Friederich and J. Hayek and A. Kux and T. Muller and N. Chan and G. Kobernik and M. Specht and D. Richter and D. Schmitt-Landsiedel",

year = "2008",

doi = "10.1109/IEDM.2008.4796826",

language = "English",

isbn = "9781424423781",

series = "Technical Digest - International Electron Devices Meeting, IEDM",

booktitle = "2008 IEEE International Electron Devices Meeting, IEDM 2008",

note = "2008 IEEE International Electron Devices Meeting, IEDM 2008 ; Conference date: 15-12-2008 Through 17-12-2008",

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Friederich, C, Hayek, J, Kux, A, Muller, T, Chan, N, Kobernik, G, Specht, M, Richter, D & Schmitt-Landsiedel, D 2008, Novel model for cell - System interaction (MCSI) in NAND flash. in 2008 IEEE International Electron Devices Meeting, IEDM 2008., 4796826, Technical Digest - International Electron Devices Meeting, IEDM, 2008 IEEE International Electron Devices Meeting, IEDM 2008, San Francisco, CA, United States, 15/12/08. https://doi.org/10.1109/IEDM.2008.4796826

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AU - Friederich, C.

AU - Hayek, J.

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AU - Chan, N.

AU - Kobernik, G.

AU - Specht, M.

AU - Richter, D.

AU - Schmitt-Landsiedel, D.

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AB - For the first time a stochastic model of the program operation in NAND Flash memories is proposed. The model incorporates intrinsic noise effects on the threshold voltage (Vth) distribution of the memory cells in incremental step pulse programming (ISPP) schemes. An excellent agreement of the model with experimental data at 48 nm ground rule is demonstrated. This model for cell-system interaction (MCSI) directly makes the link between memory transistor properties and memory system characteristics. It enables efficient algorithm development as well as evaluation of device concepts for future technology nodes with regard to the expected memory system performance and reliability.

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BT - 2008 IEEE International Electron Devices Meeting, IEDM 2008

T2 - 2008 IEEE International Electron Devices Meeting, IEDM 2008

Y2 - 15 December 2008 through 17 December 2008

ER -

Novel model for cell - System interaction (MCSI) in NAND flash

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