TY - GEN
T1 - Novel concept for a monolithically integrated MEMS VCSEL
AU - Gruendl, Tobias
AU - Nagel, Robin D.
AU - Debernardi, Pierluigi
AU - Geiger, Kathrin
AU - Grasse, Christian
AU - Hager, Thomas
AU - Ortsiefer, Markus
AU - Rosskopf, Jürgen
AU - Boehm, Gerhard
AU - Meyer, Ralf
AU - Amann, M. C.
PY - 2011
Y1 - 2011
N2 - We present a novel concept of a fully Monolithically Integrated MEMS VCSEL structure, called MIMS VCSEL. Its both components, the laser active medium and the electro-thermally tuned membrane on top show excellent values. The combination of the developed high-power laser showing 6.7 mW at 20 °C and 3 mW at 80 °C, respectively, with a widely tunable, high speed membrane (minimum bending values of 1.8 μm and tuning frequencies within 3-14 kHz) are perfect starting conditions for VCSEL devices with an aimed tuning range beyond 100 nm.
AB - We present a novel concept of a fully Monolithically Integrated MEMS VCSEL structure, called MIMS VCSEL. Its both components, the laser active medium and the electro-thermally tuned membrane on top show excellent values. The combination of the developed high-power laser showing 6.7 mW at 20 °C and 3 mW at 80 °C, respectively, with a widely tunable, high speed membrane (minimum bending values of 1.8 μm and tuning frequencies within 3-14 kHz) are perfect starting conditions for VCSEL devices with an aimed tuning range beyond 100 nm.
UR - http://www.scopus.com/inward/record.url?scp=84858274904&partnerID=8YFLogxK
M3 - Conference contribution
AN - SCOPUS:84858274904
SN - 9781457717536
T3 - Conference Proceedings - International Conference on Indium Phosphide and Related Materials
BT - 2011 Compound Semiconductor Week and 23rd International Conference on Indium Phosphide and Related Materials, CSW/IPRM 2011
T2 - 2011 Compound Semiconductor Week and 23rd International Conference on Indium Phosphide and Related Materials, CSW/IPRM 2011
Y2 - 22 May 2011 through 26 May 2011
ER -