Abstract
Novel organometallic precursors, l,3-bis(monobromosilyl)propane, l,2-bis(monobromosilyl)- ethane, and methyltribromosilane, for low-temperature deposition of β-SiC have been developed, and the kinetics and mechanism of their decomposition investigated. On the basis of the results, heteroepitaxial thin films of β-SiC with very good structural quality have been deposited on (100) Si using methyltribromosilane and methyltrichlorosilane.
| Original language | English |
|---|---|
| Pages (from-to) | 1675-1679 |
| Number of pages | 5 |
| Journal | Chemistry of Materials |
| Volume | 7 |
| Issue number | 9 |
| DOIs | |
| State | Published - Sep 1995 |
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