Novel Brominated Carbosilane Precursors for Low-Temperature Heteroepitaxy of β-SiC and Their Comparison with Methyltrichlorosilane

Th Kunstmann; H. Angerer; J. Knecht; S. Veprek; N. W. Mitzel; H. Schmidbaur

doi:10.1021/cm00057a015

Novel Brominated Carbosilane Precursors for Low-Temperature Heteroepitaxy of β-SiC and Their Comparison with Methyltrichlorosilane

Th Kunstmann, H. Angerer, J. Knecht, S. Veprek, N. W. Mitzel, H. Schmidbaur

Technical University of Munich

Research output: Contribution to journal › Article › peer-review

14 Scopus citations

Abstract

Novel organometallic precursors, l,3-bis(monobromosilyl)propane, l,2-bis(monobromosilyl)- ethane, and methyltribromosilane, for low-temperature deposition of β-SiC have been developed, and the kinetics and mechanism of their decomposition investigated. On the basis of the results, heteroepitaxial thin films of β-SiC with very good structural quality have been deposited on (100) Si using methyltribromosilane and methyltrichlorosilane.

Original language	English
Pages (from-to)	1675-1679
Number of pages	5
Journal	Chemistry of Materials
Volume	7
Issue number	9
DOIs	https://doi.org/10.1021/cm00057a015
State	Published - Sep 1995
Externally published	Yes

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title = "Novel Brominated Carbosilane Precursors for Low-Temperature Heteroepitaxy of β-SiC and Their Comparison with Methyltrichlorosilane",

abstract = "Novel organometallic precursors, l,3-bis(monobromosilyl)propane, l,2-bis(monobromosilyl)- ethane, and methyltribromosilane, for low-temperature deposition of β-SiC have been developed, and the kinetics and mechanism of their decomposition investigated. On the basis of the results, heteroepitaxial thin films of β-SiC with very good structural quality have been deposited on (100) Si using methyltribromosilane and methyltrichlorosilane.",

author = "Th Kunstmann and H. Angerer and J. Knecht and S. Veprek and Mitzel, {N. W.} and H. Schmidbaur",

year = "1995",

month = sep,

doi = "10.1021/cm00057a015",

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T1 - Novel Brominated Carbosilane Precursors for Low-Temperature Heteroepitaxy of β-SiC and Their Comparison with Methyltrichlorosilane

AU - Kunstmann, Th

AU - Angerer, H.

AU - Knecht, J.

AU - Veprek, S.

AU - Mitzel, N. W.

AU - Schmidbaur, H.

PY - 1995/9

Y1 - 1995/9

N2 - Novel organometallic precursors, l,3-bis(monobromosilyl)propane, l,2-bis(monobromosilyl)- ethane, and methyltribromosilane, for low-temperature deposition of β-SiC have been developed, and the kinetics and mechanism of their decomposition investigated. On the basis of the results, heteroepitaxial thin films of β-SiC with very good structural quality have been deposited on (100) Si using methyltribromosilane and methyltrichlorosilane.

AB - Novel organometallic precursors, l,3-bis(monobromosilyl)propane, l,2-bis(monobromosilyl)- ethane, and methyltribromosilane, for low-temperature deposition of β-SiC have been developed, and the kinetics and mechanism of their decomposition investigated. On the basis of the results, heteroepitaxial thin films of β-SiC with very good structural quality have been deposited on (100) Si using methyltribromosilane and methyltrichlorosilane.

UR - http://www.scopus.com/inward/record.url?scp=0346022881&partnerID=8YFLogxK

U2 - 10.1021/cm00057a015

DO - 10.1021/cm00057a015

M3 - Article

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VL - 7

SP - 1675

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JO - Chemistry of Materials

JF - Chemistry of Materials

IS - 9

ER -

Novel Brominated Carbosilane Precursors for Low-Temperature Heteroepitaxy of β-SiC and Their Comparison with Methyltrichlorosilane

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