Nonuniform current and spin accumulation in a 1 μm thick n-GaAs channel

B. Endres; M. Ciorga; R. Wagner; S. Ringer; M. Utz; D. Bougeard; D. Weiss; C. H. Back; G. Bayreuther

doi:10.1063/1.3691175

Nonuniform current and spin accumulation in a 1 μm thick n-GaAs channel

B. Endres, M. Ciorga, R. Wagner, S. Ringer, M. Utz, D. Bougeard, D. Weiss, C. H. Back, G. Bayreuther

University of Regensburg

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

The spin accumulation in a n-GaAs channel produced by spin extraction into a (Ga,Mn)As contact is measured by cross-sectional imaging of the spin polarization in GaAs. The spin polarization is observed in a 1 m thick n-GaAs channel with the maximum polarization near the contact edge opposite to the maximum current density. The one-dimensional model of electron drift and spin diffusion, frequently used, cannot explain this observation. It also leads to incorrect spin lifetimes from Hanle curves with a strong bias and distance dependence. Numerical simulations based on a two-dimensional drift-diffusion model, however, reproduce the observed spin distribution quite well and lead to realistic spin lifetimes.

Original language	English
Article number	092405
Journal	Applied Physics Letters
Volume	100
Issue number	9
DOIs	https://doi.org/10.1063/1.3691175
State	Published - 27 Feb 2012
Externally published	Yes

Access to Document

10.1063/1.3691175

Cite this

@article{e615f0a348124ceb84a5c15580bb9631,

title = "Nonuniform current and spin accumulation in a 1 μm thick n-GaAs channel",

abstract = "The spin accumulation in a n-GaAs channel produced by spin extraction into a (Ga,Mn)As contact is measured by cross-sectional imaging of the spin polarization in GaAs. The spin polarization is observed in a 1 m thick n-GaAs channel with the maximum polarization near the contact edge opposite to the maximum current density. The one-dimensional model of electron drift and spin diffusion, frequently used, cannot explain this observation. It also leads to incorrect spin lifetimes from Hanle curves with a strong bias and distance dependence. Numerical simulations based on a two-dimensional drift-diffusion model, however, reproduce the observed spin distribution quite well and lead to realistic spin lifetimes.",

author = "B. Endres and M. Ciorga and R. Wagner and S. Ringer and M. Utz and D. Bougeard and D. Weiss and Back, {C. H.} and G. Bayreuther",

year = "2012",

month = feb,

day = "27",

doi = "10.1063/1.3691175",

language = "English",

volume = "100",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "9",

}

TY - JOUR

T1 - Nonuniform current and spin accumulation in a 1 μm thick n-GaAs channel

AU - Endres, B.

AU - Ciorga, M.

AU - Wagner, R.

AU - Ringer, S.

AU - Utz, M.

AU - Bougeard, D.

AU - Weiss, D.

AU - Back, C. H.

AU - Bayreuther, G.

PY - 2012/2/27

Y1 - 2012/2/27

N2 - The spin accumulation in a n-GaAs channel produced by spin extraction into a (Ga,Mn)As contact is measured by cross-sectional imaging of the spin polarization in GaAs. The spin polarization is observed in a 1 m thick n-GaAs channel with the maximum polarization near the contact edge opposite to the maximum current density. The one-dimensional model of electron drift and spin diffusion, frequently used, cannot explain this observation. It also leads to incorrect spin lifetimes from Hanle curves with a strong bias and distance dependence. Numerical simulations based on a two-dimensional drift-diffusion model, however, reproduce the observed spin distribution quite well and lead to realistic spin lifetimes.

AB - The spin accumulation in a n-GaAs channel produced by spin extraction into a (Ga,Mn)As contact is measured by cross-sectional imaging of the spin polarization in GaAs. The spin polarization is observed in a 1 m thick n-GaAs channel with the maximum polarization near the contact edge opposite to the maximum current density. The one-dimensional model of electron drift and spin diffusion, frequently used, cannot explain this observation. It also leads to incorrect spin lifetimes from Hanle curves with a strong bias and distance dependence. Numerical simulations based on a two-dimensional drift-diffusion model, however, reproduce the observed spin distribution quite well and lead to realistic spin lifetimes.

UR - http://www.scopus.com/inward/record.url?scp=84857969828&partnerID=8YFLogxK

U2 - 10.1063/1.3691175

DO - 10.1063/1.3691175

M3 - Article

AN - SCOPUS:84857969828

SN - 0003-6951

VL - 100

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 9

M1 - 092405

ER -

Nonuniform current and spin accumulation in a 1 μm thick n-GaAs channel

Abstract

Access to Document

Other files and links

Fingerprint

Cite this