Nonmagnetic compensation in ferromagnetic Ga1-x Mnx As and Ga1-xMnx P synthesized by ion implantation and pulsed-laser melting

M. A. Scarpulla; P. R. Stone; I. D. Sharp; E. E. Haller; O. D. Dubon; J. W. Beeman; K. M. Yu

doi:10.1063/1.2940361

Nonmagnetic compensation in ferromagnetic Ga_1-x Mn_x As and Ga_1-xMn_x P synthesized by ion implantation and pulsed-laser melting

M. A. Scarpulla, P. R. Stone, I. D. Sharp, E. E. Haller, O. D. Dubon, J. W. Beeman, K. M. Yu

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Abstract

The electronic and magnetic effects of intentional compensation with nonmagnetic donors are investigated in the ferromagnetic semiconductors Ga1-x Mnx As and Ga1-x Mnx P synthesized using ion implantation and pulsed-laser melting. It is demonstrated that compensation with nonmagnetic donors and MnI have similar qualitative effects on materials properties. With compensation TC decreases, resistivity increases, and stronger magnetoresistance and anomalous Hall effect attributed to skew scattering are observed. Ga1-x Mnx As can be controllably compensated with Te through a metal-insulator transition through which the magnetic and electrical properties vary continuously. The resistivity of insulating Ga1-x Mnx As:Te can be described by thermal activation to the mobility edge and simply activated hopping transport. Ga1-x Mnx P doped with S is insulating at all compositions but shows decreasing TC with compensation. The existence of a ferromagnetic insulating state in Ga1-x Mnx As:Te and Ga1-x Mnx P:S having TC 's of the same order as the uncompensated materials demonstrates that localized holes are effective at mediating global ferromagnetism in ferromagnetic semiconductors through the percolation of ferromagnetic "puddles" at low temperatures.

Original language	English
Article number	123906
Journal	Journal of Applied Physics
Volume	103
Issue number	12
DOIs	https://doi.org/10.1063/1.2940361
State	Published - 2008
Externally published	Yes

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@article{b503453b16a841498e89a636410978e7,

title = "Nonmagnetic compensation in ferromagnetic Ga1-x Mnx As and Ga1-xMnx P synthesized by ion implantation and pulsed-laser melting",

abstract = "The electronic and magnetic effects of intentional compensation with nonmagnetic donors are investigated in the ferromagnetic semiconductors Ga1-x Mnx As and Ga1-x Mnx P synthesized using ion implantation and pulsed-laser melting. It is demonstrated that compensation with nonmagnetic donors and MnI have similar qualitative effects on materials properties. With compensation TC decreases, resistivity increases, and stronger magnetoresistance and anomalous Hall effect attributed to skew scattering are observed. Ga1-x Mnx As can be controllably compensated with Te through a metal-insulator transition through which the magnetic and electrical properties vary continuously. The resistivity of insulating Ga1-x Mnx As:Te can be described by thermal activation to the mobility edge and simply activated hopping transport. Ga1-x Mnx P doped with S is insulating at all compositions but shows decreasing TC with compensation. The existence of a ferromagnetic insulating state in Ga1-x Mnx As:Te and Ga1-x Mnx P:S having TC 's of the same order as the uncompensated materials demonstrates that localized holes are effective at mediating global ferromagnetism in ferromagnetic semiconductors through the percolation of ferromagnetic {"}puddles{"} at low temperatures.",

author = "Scarpulla, {M. A.} and Stone, {P. R.} and Sharp, {I. D.} and Haller, {E. E.} and Dubon, {O. D.} and Beeman, {J. W.} and Yu, {K. M.}",

note = "Funding Information: This work was supported by the Director, Office of Science, Office of Basic Energy Sciences, Division of Materials Sciences and Engineering, of the U.S. Department of Energy under Contract No. DE-AC02-05CH11231. M.A.S. acknowledges support from a NSF Graduate Research Fellowship. P.R.S. acknowledges support from a NDSEG Fellowship.",

year = "2008",

doi = "10.1063/1.2940361",

language = "English",

volume = "103",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics",

number = "12",

}

TY - JOUR

T1 - Nonmagnetic compensation in ferromagnetic Ga1-x Mnx As and Ga1-xMnx P synthesized by ion implantation and pulsed-laser melting

AU - Scarpulla, M. A.

AU - Stone, P. R.

AU - Sharp, I. D.

AU - Haller, E. E.

AU - Dubon, O. D.

AU - Beeman, J. W.

AU - Yu, K. M.

N1 - Funding Information: This work was supported by the Director, Office of Science, Office of Basic Energy Sciences, Division of Materials Sciences and Engineering, of the U.S. Department of Energy under Contract No. DE-AC02-05CH11231. M.A.S. acknowledges support from a NSF Graduate Research Fellowship. P.R.S. acknowledges support from a NDSEG Fellowship.

PY - 2008

Y1 - 2008

N2 - The electronic and magnetic effects of intentional compensation with nonmagnetic donors are investigated in the ferromagnetic semiconductors Ga1-x Mnx As and Ga1-x Mnx P synthesized using ion implantation and pulsed-laser melting. It is demonstrated that compensation with nonmagnetic donors and MnI have similar qualitative effects on materials properties. With compensation TC decreases, resistivity increases, and stronger magnetoresistance and anomalous Hall effect attributed to skew scattering are observed. Ga1-x Mnx As can be controllably compensated with Te through a metal-insulator transition through which the magnetic and electrical properties vary continuously. The resistivity of insulating Ga1-x Mnx As:Te can be described by thermal activation to the mobility edge and simply activated hopping transport. Ga1-x Mnx P doped with S is insulating at all compositions but shows decreasing TC with compensation. The existence of a ferromagnetic insulating state in Ga1-x Mnx As:Te and Ga1-x Mnx P:S having TC 's of the same order as the uncompensated materials demonstrates that localized holes are effective at mediating global ferromagnetism in ferromagnetic semiconductors through the percolation of ferromagnetic "puddles" at low temperatures.

AB - The electronic and magnetic effects of intentional compensation with nonmagnetic donors are investigated in the ferromagnetic semiconductors Ga1-x Mnx As and Ga1-x Mnx P synthesized using ion implantation and pulsed-laser melting. It is demonstrated that compensation with nonmagnetic donors and MnI have similar qualitative effects on materials properties. With compensation TC decreases, resistivity increases, and stronger magnetoresistance and anomalous Hall effect attributed to skew scattering are observed. Ga1-x Mnx As can be controllably compensated with Te through a metal-insulator transition through which the magnetic and electrical properties vary continuously. The resistivity of insulating Ga1-x Mnx As:Te can be described by thermal activation to the mobility edge and simply activated hopping transport. Ga1-x Mnx P doped with S is insulating at all compositions but shows decreasing TC with compensation. The existence of a ferromagnetic insulating state in Ga1-x Mnx As:Te and Ga1-x Mnx P:S having TC 's of the same order as the uncompensated materials demonstrates that localized holes are effective at mediating global ferromagnetism in ferromagnetic semiconductors through the percolation of ferromagnetic "puddles" at low temperatures.

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DO - 10.1063/1.2940361

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Nonmagnetic compensation in ferromagnetic Ga_1-x Mn_x As and Ga_1-xMn_x P synthesized by ion implantation and pulsed-laser melting

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