Nonlinear approach for the optimization of a DRO at 10.4 GHz

J. Hausner; G. R. Olbrich; P. Russer; A. A. Valenzuela

doi:10.1109/euma.1988.333827

Nonlinear approach for the optimization of a DRO at 10.4 GHz

J. Hausner
, G. R. Olbrich
, P. Russer
, A. A. Valenzuela

Technical University of Munich

Technical University of Munich

Research output: Contribution to conference › Paper › peer-review

1 Scopus citations

Abstract

This paper describes the design of a 10.4 GHz dielectric resonator stabilized oscillator. The DRO was designed using linear theory and then optimized for power and noise using nonlinear theory based upon the transistor's small signal S-parameters at the operating point, its dc-characteristic, and its noise parameters. The oscillator was fabricated in microstrip technology on a PTFE substrate. A packaged NEC N71083 GaAs MESFET was used. An output power of 14.1 dbm, and a phase noise of -92 dBc/Hz at 10 kHz offset were achieved.

Original language	English
Pages	268-273
Number of pages	6
DOIs	https://doi.org/10.1109/euma.1988.333827
State	Published - 1988
Event	Conference Proceedings: 18th European Microwave Conference 88 - Stockholm, Swed Duration: 12 Sep 1988 → 15 Sep 1988

Conference

Conference	Conference Proceedings: 18th European Microwave Conference 88
City	Stockholm, Swed
Period	12/09/88 → 15/09/88

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10.1109/euma.1988.333827

Cite this

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title = "Nonlinear approach for the optimization of a DRO at 10.4 GHz",

abstract = "This paper describes the design of a 10.4 GHz dielectric resonator stabilized oscillator. The DRO was designed using linear theory and then optimized for power and noise using nonlinear theory based upon the transistor's small signal S-parameters at the operating point, its dc-characteristic, and its noise parameters. The oscillator was fabricated in microstrip technology on a PTFE substrate. A packaged NEC N71083 GaAs MESFET was used. An output power of 14.1 dbm, and a phase noise of -92 dBc/Hz at 10 kHz offset were achieved.",

author = "J. Hausner and Olbrich, \{G. R.\} and P. Russer and Valenzuela, \{A. A.\}",

year = "1988",

doi = "10.1109/euma.1988.333827",

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note = "Conference Proceedings: 18th European Microwave Conference 88 ; Conference date: 12-09-1988 Through 15-09-1988",

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AU - Hausner, J.

AU - Olbrich, G. R.

AU - Russer, P.

AU - Valenzuela, A. A.

PY - 1988

Y1 - 1988

N2 - This paper describes the design of a 10.4 GHz dielectric resonator stabilized oscillator. The DRO was designed using linear theory and then optimized for power and noise using nonlinear theory based upon the transistor's small signal S-parameters at the operating point, its dc-characteristic, and its noise parameters. The oscillator was fabricated in microstrip technology on a PTFE substrate. A packaged NEC N71083 GaAs MESFET was used. An output power of 14.1 dbm, and a phase noise of -92 dBc/Hz at 10 kHz offset were achieved.

AB - This paper describes the design of a 10.4 GHz dielectric resonator stabilized oscillator. The DRO was designed using linear theory and then optimized for power and noise using nonlinear theory based upon the transistor's small signal S-parameters at the operating point, its dc-characteristic, and its noise parameters. The oscillator was fabricated in microstrip technology on a PTFE substrate. A packaged NEC N71083 GaAs MESFET was used. An output power of 14.1 dbm, and a phase noise of -92 dBc/Hz at 10 kHz offset were achieved.

UR - https://www.scopus.com/pages/publications/0024174927

U2 - 10.1109/euma.1988.333827

DO - 10.1109/euma.1988.333827

M3 - Paper

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SP - 268

EP - 273

T2 - Conference Proceedings: 18th European Microwave Conference 88

Y2 - 12 September 1988 through 15 September 1988

ER -

Nonlinear approach for the optimization of a DRO at 10.4 GHz

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