Nonequilibrium band structure of nano-devices

S. Hackenbuchner, M. Sabathil, J. A. Majewski, G. Zandler, P. Vogl, E. Beham, A. Zrenner, P. Lugli

Research output: Contribution to journalArticlepeer-review

12 Scopus citations

Abstract

A method is developed for calculating, in a consistent manner, the realistic electronic structure of three-dimensional (3-D) heterostructure quantum devices under bias and its current density close to equilibrium. The nonequilibrium electronic structure is characterized by local Fermi levels that are calculated self-consistently. We have applied this scheme to predict asymmetric Stark shifts and tunneling of confined electrons and holes in single-dot GaAs/InGaAs photodiodes.

Original languageEnglish
Pages (from-to)145-149
Number of pages5
JournalPhysica B: Condensed Matter
Volume314
Issue number1-4
DOIs
StatePublished - Mar 2002
Externally publishedYes

Keywords

  • Nano-devices
  • Quantum dots
  • Simulations
  • Stark shift

Fingerprint

Dive into the research topics of 'Nonequilibrium band structure of nano-devices'. Together they form a unique fingerprint.

Cite this