Nonequilibrium band structure of nano-devices

S. Hackenbuchner, M. Sabathil, J. A. Majewski, G. Zandler, P. Vogl, E. Beham, A. Zrenner, P. Lugli

Research output: Contribution to journalArticlepeer-review

12 Scopus citations


A method is developed for calculating, in a consistent manner, the realistic electronic structure of three-dimensional (3-D) heterostructure quantum devices under bias and its current density close to equilibrium. The nonequilibrium electronic structure is characterized by local Fermi levels that are calculated self-consistently. We have applied this scheme to predict asymmetric Stark shifts and tunneling of confined electrons and holes in single-dot GaAs/InGaAs photodiodes.

Original languageEnglish
Pages (from-to)145-149
Number of pages5
JournalPhysica B: Condensed Matter
Issue number1-4
StatePublished - Mar 2002
Externally publishedYes


  • Nano-devices
  • Quantum dots
  • Simulations
  • Stark shift


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