Non-linear gate length dependence of on-current in Si-Nanowire FETs

W. M. Weber; A. P. Graham; G. S. Duesberg; M. Liebau; C. Cheze; L. Geelhaar; E. Unger; W. Pamler; W. Hoenlein; H. Riechert; F. Kreupl; P. Lugli

doi:10.1109/essder.2006.307728

Non-linear gate length dependence of on-current in Si-Nanowire FETs

W. M. Weber, A. P. Graham, G. S. Duesberg, M. Liebau, C. Cheze, L. Geelhaar, E. Unger, W. Pamler, W. Hoenlein, H. Riechert, F. Kreupl, P. Lugli

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

10 Scopus citations

Abstract

An extensive gate-length (L_G) dependent electrical characterization of silicon nanowire (NW) field effect transistors (FET) is presented here. Catalytically-grown and nominally undoped Si-NWs were integrated as the active region of FETs, upon which fully silicided Schottky source and drain contacts were fabricated. The length of the active region was shortened by a desired value, through the lateral self-aligned formation of nickel silicide source- and drain-segments. All Si-NW FETs consisting of a single Si-NW with diameters between 10 and 30 nm display p-type behaviour and on/off-current ratios of up to 10⁷. Devices with L_Gs below 1 μm and 21 nm NW-diameters all show the same on currents around 1 μA at 1 V drain-source biases. For L_G > 1 μm the on-current decreases exponentially with increasing L_G.

Original language	English
Title of host publication	ESSDERC 2006 - Proceedings of the 36th European Solid-State Device Research Conference
Publisher	IEEE Computer Society
Pages	423-426
Number of pages	4
ISBN (Print)	1424403014, 9781424403011
DOIs	https://doi.org/10.1109/essder.2006.307728
State	Published - 2006
Externally published	Yes
Event	ESSDERC 2006 - 36th European Solid-State Device Research Conference - Montreux, Switzerland Duration: 19 Sep 2006 → 21 Sep 2006

Publication series

Name	ESSDERC 2006 - Proceedings of the 36th European Solid-State Device Research Conference
Volume	2006-January

Conference

Conference	ESSDERC 2006 - 36th European Solid-State Device Research Conference
Country/Territory	Switzerland
City	Montreux
Period	19/09/06 → 21/09/06

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10.1109/essder.2006.307728

Cite this

Weber, W. M., Graham, A. P., Duesberg, G. S., Liebau, M., Cheze, C., Geelhaar, L., Unger, E., Pamler, W., Hoenlein, W., Riechert, H., Kreupl, F., & Lugli, P. (2006). Non-linear gate length dependence of on-current in Si-Nanowire FETs. In ESSDERC 2006 - Proceedings of the 36th European Solid-State Device Research Conference (pp. 423-426). Article 4099946 (ESSDERC 2006 - Proceedings of the 36th European Solid-State Device Research Conference; Vol. 2006-January). IEEE Computer Society. https://doi.org/10.1109/essder.2006.307728

@inproceedings{9815873946ac411b86ced33c478ea5c2,

title = "Non-linear gate length dependence of on-current in Si-Nanowire FETs",

abstract = "An extensive gate-length (LG) dependent electrical characterization of silicon nanowire (NW) field effect transistors (FET) is presented here. Catalytically-grown and nominally undoped Si-NWs were integrated as the active region of FETs, upon which fully silicided Schottky source and drain contacts were fabricated. The length of the active region was shortened by a desired value, through the lateral self-aligned formation of nickel silicide source- and drain-segments. All Si-NW FETs consisting of a single Si-NW with diameters between 10 and 30 nm display p-type behaviour and on/off-current ratios of up to 107. Devices with LGs below 1 μm and 21 nm NW-diameters all show the same on currents around 1 μA at 1 V drain-source biases. For LG > 1 μm the on-current decreases exponentially with increasing LG.",

author = "Weber, {W. M.} and Graham, {A. P.} and Duesberg, {G. S.} and M. Liebau and C. Cheze and L. Geelhaar and E. Unger and W. Pamler and W. Hoenlein and H. Riechert and F. Kreupl and P. Lugli",

note = "Publisher Copyright: {\textcopyright}2006 IEEE.; ESSDERC 2006 - 36th European Solid-State Device Research Conference ; Conference date: 19-09-2006 Through 21-09-2006",

year = "2006",

doi = "10.1109/essder.2006.307728",

language = "English",

isbn = "1424403014",

series = "ESSDERC 2006 - Proceedings of the 36th European Solid-State Device Research Conference",

publisher = "IEEE Computer Society",

pages = "423--426",

booktitle = "ESSDERC 2006 - Proceedings of the 36th European Solid-State Device Research Conference",

}

Weber, WM, Graham, AP, Duesberg, GS, Liebau, M, Cheze, C, Geelhaar, L, Unger, E, Pamler, W, Hoenlein, W, Riechert, H, Kreupl, F & Lugli, P 2006, Non-linear gate length dependence of on-current in Si-Nanowire FETs. in ESSDERC 2006 - Proceedings of the 36th European Solid-State Device Research Conference., 4099946, ESSDERC 2006 - Proceedings of the 36th European Solid-State Device Research Conference, vol. 2006-January, IEEE Computer Society, pp. 423-426, ESSDERC 2006 - 36th European Solid-State Device Research Conference, Montreux, Switzerland, 19/09/06. https://doi.org/10.1109/essder.2006.307728

Non-linear gate length dependence of on-current in Si-Nanowire FETs. / Weber, W. M.; Graham, A. P.; Duesberg, G. S. et al.
ESSDERC 2006 - Proceedings of the 36th European Solid-State Device Research Conference. IEEE Computer Society, 2006. p. 423-426 4099946 (ESSDERC 2006 - Proceedings of the 36th European Solid-State Device Research Conference; Vol. 2006-January).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Non-linear gate length dependence of on-current in Si-Nanowire FETs

AU - Weber, W. M.

AU - Graham, A. P.

AU - Duesberg, G. S.

AU - Liebau, M.

AU - Cheze, C.

AU - Geelhaar, L.

AU - Unger, E.

AU - Pamler, W.

AU - Hoenlein, W.

AU - Riechert, H.

AU - Kreupl, F.

AU - Lugli, P.

PY - 2006

Y1 - 2006

N2 - An extensive gate-length (LG) dependent electrical characterization of silicon nanowire (NW) field effect transistors (FET) is presented here. Catalytically-grown and nominally undoped Si-NWs were integrated as the active region of FETs, upon which fully silicided Schottky source and drain contacts were fabricated. The length of the active region was shortened by a desired value, through the lateral self-aligned formation of nickel silicide source- and drain-segments. All Si-NW FETs consisting of a single Si-NW with diameters between 10 and 30 nm display p-type behaviour and on/off-current ratios of up to 107. Devices with LGs below 1 μm and 21 nm NW-diameters all show the same on currents around 1 μA at 1 V drain-source biases. For LG > 1 μm the on-current decreases exponentially with increasing LG.

AB - An extensive gate-length (LG) dependent electrical characterization of silicon nanowire (NW) field effect transistors (FET) is presented here. Catalytically-grown and nominally undoped Si-NWs were integrated as the active region of FETs, upon which fully silicided Schottky source and drain contacts were fabricated. The length of the active region was shortened by a desired value, through the lateral self-aligned formation of nickel silicide source- and drain-segments. All Si-NW FETs consisting of a single Si-NW with diameters between 10 and 30 nm display p-type behaviour and on/off-current ratios of up to 107. Devices with LGs below 1 μm and 21 nm NW-diameters all show the same on currents around 1 μA at 1 V drain-source biases. For LG > 1 μm the on-current decreases exponentially with increasing LG.

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M3 - Conference contribution

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SN - 1424403014

SN - 9781424403011

T3 - ESSDERC 2006 - Proceedings of the 36th European Solid-State Device Research Conference

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EP - 426

BT - ESSDERC 2006 - Proceedings of the 36th European Solid-State Device Research Conference

PB - IEEE Computer Society

T2 - ESSDERC 2006 - 36th European Solid-State Device Research Conference

Y2 - 19 September 2006 through 21 September 2006

ER -

Weber WM, Graham AP, Duesberg GS, Liebau M, Cheze C, Geelhaar L et al. Non-linear gate length dependence of on-current in Si-Nanowire FETs. In ESSDERC 2006 - Proceedings of the 36th European Solid-State Device Research Conference. IEEE Computer Society. 2006. p. 423-426. 4099946. (ESSDERC 2006 - Proceedings of the 36th European Solid-State Device Research Conference). doi: 10.1109/essder.2006.307728

Non-linear gate length dependence of on-current in Si-Nanowire FETs

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