Abstract
We identify fundamental mechanisms of electron and hole dynamics from self-organized InAs/GaAs quantum dots subject to vertical electric fields by photocurrent and photoluminescence investigations. We observed a nonlinear power dependent photocurrent that is associated with charge accumulation into the dots. Steady-state rate equations have been used to simulate the charge accumulation process. The solution has shown that the charge accumulation should increase the capture rate of electrons into the dots.
| Original language | English |
|---|---|
| Pages (from-to) | 667-669 |
| Number of pages | 3 |
| Journal | Microelectronics Journal |
| Volume | 34 |
| Issue number | 5-8 |
| DOIs | |
| State | Published - May 2003 |
| Externally published | Yes |
Keywords
- Photocurrent
- Photoluminescence
- Quantum dots