Abstract
We identify fundamental mechanisms of electron and hole dynamics from self-organized InAs/GaAs quantum dots subject to vertical electric fields by photocurrent and photoluminescence investigations. We observed a nonlinear power dependent photocurrent that is associated with charge accumulation into the dots. Steady-state rate equations have been used to simulate the charge accumulation process. The solution has shown that the charge accumulation should increase the capture rate of electrons into the dots.
Original language | English |
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Pages (from-to) | 667-669 |
Number of pages | 3 |
Journal | Microelectronics Journal |
Volume | 34 |
Issue number | 5-8 |
DOIs | |
State | Published - May 2003 |
Externally published | Yes |
Keywords
- Photocurrent
- Photoluminescence
- Quantum dots