Non-linear effects on the power dependent photocurrent of self-assembled InAs/GaAs quantum dots

A. F.G. Monte, J. J. Finley, D. M. Whittaker, I. Itskevitch, D. J. Mowbray, M. S. Skolnick, F. V. Sales, M. Hopkins

Research output: Contribution to journalArticlepeer-review

3 Scopus citations

Abstract

We identify fundamental mechanisms of electron and hole dynamics from self-organized InAs/GaAs quantum dots subject to vertical electric fields by photocurrent and photoluminescence investigations. We observed a nonlinear power dependent photocurrent that is associated with charge accumulation into the dots. Steady-state rate equations have been used to simulate the charge accumulation process. The solution has shown that the charge accumulation should increase the capture rate of electrons into the dots.

Original languageEnglish
Pages (from-to)667-669
Number of pages3
JournalMicroelectronics Journal
Volume34
Issue number5-8
DOIs
StatePublished - May 2003
Externally publishedYes

Keywords

  • Photocurrent
  • Photoluminescence
  • Quantum dots

Fingerprint

Dive into the research topics of 'Non-linear effects on the power dependent photocurrent of self-assembled InAs/GaAs quantum dots'. Together they form a unique fingerprint.

Cite this