Noise-detected magnetic resonance experiments in amorphous hydrogenated silicon

S. T.B. Goennenwein, M. W. Bayerl, M. S. Brandt, M. Stutzmann

Research output: Contribution to journalConference articlepeer-review

3 Scopus citations


The microscopic origin of electronic noise in intrinsic amorphous hydrogenated silicon (a-Si:H) is studied with noise-detected magnetic resonance (NDMR). This measurement technique, combining conventional noise spectroscopy and electron paramagnetic resonance (EPR), allows the identification of paramagnetic states involved in transport processes underlying electronic noise. The sensitivity of the setup is discussed and shown to be at the fundamental limit within a factor of 2. The NDMR results obtained from Cr-n+-i-n+-Cr a-Si:H sandwich structures show that holes in the valence band tail play a dominant role in the generation of low-frequency non-thermal noise in intrinsic a-Si:H.

Original languageEnglish
Pages (from-to)237-241
Number of pages5
JournalJournal of Non-Crystalline Solids
Volume266-269 A
StatePublished - 1 May 2000
Event18th International Conference on Amorphous and Microcrystalline Semiconductors - Sicence and Technology (ICAMS 18) - Snowbird, UT, United States
Duration: 23 Aug 199927 Aug 1999


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