TY - JOUR
T1 - New tungsten(VI) guanidinato complexes
T2 - Synthesis, characterization, and application in metal-organic chemical vapor deposition of tungsten nitride thin films
AU - Rische, Daniel
AU - Parala, Harish
AU - Gemel, Eliza
AU - Winter, Manuela
AU - Fischer, Roland A.
PY - 2006/12/12
Y1 - 2006/12/12
N2 - Two new tungsten complexes, [W(NtBu)2(NMe 2){(iPrN)2CNMe2}] (2) and [W(NtBu) 2(H){(iPrN)2CNMe2}] (3), as precursors for metal-organic chemical vapor deposition (MOCVD) of tungsten nitride thin films were synthesized from the starting compound [W(NtBu)2(Cl){(iPrN) 2CNMe2}] (1) by substitution of the chloro ligand by a dimethylamido and a hydrido group, respectively. Compounds 1-3 were characterized by 1H NMR, 13C NMR, EI-MS, IR, and elemental analysis including single-crystal X-ray diffraction studies on 1 and 3. The thermal properties of the compounds were studied by thermogravimetric and differential thermal analysis. Precursors 2 and 3 were compared for the growth of tungsten nitride thin films by MOCVD. The obtained films were characterized by X-ray diffraction and scanning electron microscopy and by depth-profiling the composition with secondary neutron mass spectroscopy. Films grown without ammonia had surprisingly low nitrogen levels, indicating that 2 and 3 are not suited as single-source precursors for pure WNx phases. When ammonia was used as a co reactant gas, the carbon content in the films decreased significantly and crystalline β-W2N was obtained. Interestingly, films grown in the presence of ammonia by amido compound 2 yielded lower carbon contents than films obtained from hydrido compound 3.
AB - Two new tungsten complexes, [W(NtBu)2(NMe 2){(iPrN)2CNMe2}] (2) and [W(NtBu) 2(H){(iPrN)2CNMe2}] (3), as precursors for metal-organic chemical vapor deposition (MOCVD) of tungsten nitride thin films were synthesized from the starting compound [W(NtBu)2(Cl){(iPrN) 2CNMe2}] (1) by substitution of the chloro ligand by a dimethylamido and a hydrido group, respectively. Compounds 1-3 were characterized by 1H NMR, 13C NMR, EI-MS, IR, and elemental analysis including single-crystal X-ray diffraction studies on 1 and 3. The thermal properties of the compounds were studied by thermogravimetric and differential thermal analysis. Precursors 2 and 3 were compared for the growth of tungsten nitride thin films by MOCVD. The obtained films were characterized by X-ray diffraction and scanning electron microscopy and by depth-profiling the composition with secondary neutron mass spectroscopy. Films grown without ammonia had surprisingly low nitrogen levels, indicating that 2 and 3 are not suited as single-source precursors for pure WNx phases. When ammonia was used as a co reactant gas, the carbon content in the films decreased significantly and crystalline β-W2N was obtained. Interestingly, films grown in the presence of ammonia by amido compound 2 yielded lower carbon contents than films obtained from hydrido compound 3.
UR - http://www.scopus.com/inward/record.url?scp=33846120912&partnerID=8YFLogxK
U2 - 10.1021/cm061999d
DO - 10.1021/cm061999d
M3 - Article
AN - SCOPUS:33846120912
SN - 0897-4756
VL - 18
SP - 6075
EP - 6082
JO - Chemistry of Materials
JF - Chemistry of Materials
IS - 25
ER -