New paramagnetic states in amorphous silicon and germanium

M. Stutzmann; J. Stuke

doi:10.1016/0022-3093(84)90313-2

New paramagnetic states in amorphous silicon and germanium

M. Stutzmann, J. Stuke

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Abstract

New paramagnetic centers were observed by electron spin resonance at low temperatures in a-Si:H, a-Ge:H and related alloys. Phosphorus-doped samples show a pair of hyperfine lines with spin densities up to 10¹⁷ cm^-3 centered around the well known conduction band tail resonance. A second resonance is found in many samples regardless of the doping level and is tentatively ascribed to surface states.

Original language	English
Pages (from-to)	145-150
Number of pages	6
Journal	Journal of Non-Crystalline Solids
Volume	66
Issue number	1-2
DOIs	https://doi.org/10.1016/0022-3093(84)90313-2
State	Published - Jul 1984
Externally published	Yes

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10.1016/0022-3093(84)90313-2

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title = "New paramagnetic states in amorphous silicon and germanium",

abstract = "New paramagnetic centers were observed by electron spin resonance at low temperatures in a-Si:H, a-Ge:H and related alloys. Phosphorus-doped samples show a pair of hyperfine lines with spin densities up to 1017 cm-3 centered around the well known conduction band tail resonance. A second resonance is found in many samples regardless of the doping level and is tentatively ascribed to surface states.",

author = "M. Stutzmann and J. Stuke",

note = "Funding Information: This work was supported by Stiftung Volkswagenwerk and by SERI under contract no. XB-3-03112-I. We especially thank H. Dersch for providing some of the samples.",

year = "1984",

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doi = "10.1016/0022-3093(84)90313-2",

language = "English",

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pages = "145--150",

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T1 - New paramagnetic states in amorphous silicon and germanium

AU - Stutzmann, M.

AU - Stuke, J.

N1 - Funding Information: This work was supported by Stiftung Volkswagenwerk and by SERI under contract no. XB-3-03112-I. We especially thank H. Dersch for providing some of the samples.

PY - 1984/7

Y1 - 1984/7

N2 - New paramagnetic centers were observed by electron spin resonance at low temperatures in a-Si:H, a-Ge:H and related alloys. Phosphorus-doped samples show a pair of hyperfine lines with spin densities up to 1017 cm-3 centered around the well known conduction band tail resonance. A second resonance is found in many samples regardless of the doping level and is tentatively ascribed to surface states.

AB - New paramagnetic centers were observed by electron spin resonance at low temperatures in a-Si:H, a-Ge:H and related alloys. Phosphorus-doped samples show a pair of hyperfine lines with spin densities up to 1017 cm-3 centered around the well known conduction band tail resonance. A second resonance is found in many samples regardless of the doping level and is tentatively ascribed to surface states.

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U2 - 10.1016/0022-3093(84)90313-2

DO - 10.1016/0022-3093(84)90313-2

M3 - Article

AN - SCOPUS:0021466838

SN - 0022-3093

VL - 66

SP - 145

EP - 150

JO - Journal of Non-Crystalline Solids

JF - Journal of Non-Crystalline Solids

IS - 1-2

ER -

New paramagnetic states in amorphous silicon and germanium

Abstract

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