New nano-porous composite films of silsesquioxane polymer and silicate-1 for low dielectric applications

Ruo Qing Su, Gabriela Zadrozna, Thomas E. Müller, Johannes A. Lercher

Research output: Contribution to journalConference articlepeer-review

1 Scopus citations

Abstract

Low - κ interlayer dielectric materials have been identified by the microelectronics industry as one of the critical factors in the development of submicron technology for integrated circuits. Present standard in low κ materials have dielectric constants κ in the range of 2.9 - 3.3 [1,2]. In order to reduce the κ value it is necessary either to incorporate atoms and chemical bonds that have a lower polarizability, or else to lower the atom density in the material, or both [3,4]. In this paper, we report on a series of new porous materials based on organic/inorganic hybrid silsesquioxane polymers (R8Si8O12)n and nano-crystalline particle of silicalite-1 with κ in the range of 1.7-2.1.

Original languageEnglish
Pages (from-to)285-289
Number of pages5
JournalMaterials Research Society Symposium - Proceedings
Volume766
StatePublished - 2003
EventMaterials, Technology and Reliability for Advanced Interconnects and Low-k Dielectrics - 2003 - San Francisco, CA, United States
Duration: 21 Apr 200325 Apr 2003

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