Abstract
Low - κ interlayer dielectric materials have been identified by the microelectronics industry as one of the critical factors in the development of submicron technology for integrated circuits. Present standard in low κ materials have dielectric constants κ in the range of 2.9 - 3.3 [1,2]. In order to reduce the κ value it is necessary either to incorporate atoms and chemical bonds that have a lower polarizability, or else to lower the atom density in the material, or both [3,4]. In this paper, we report on a series of new porous materials based on organic/inorganic hybrid silsesquioxane polymers (R8Si8O12)n and nano-crystalline particle of silicalite-1 with κ in the range of 1.7-2.1.
Original language | English |
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Pages (from-to) | 285-289 |
Number of pages | 5 |
Journal | Materials Research Society Symposium - Proceedings |
Volume | 766 |
State | Published - 2003 |
Event | Materials, Technology and Reliability for Advanced Interconnects and Low-k Dielectrics - 2003 - San Francisco, CA, United States Duration: 21 Apr 2003 → 25 Apr 2003 |