New methodology for on-chip RF reliability assessment

Leonhard Heis, Andreas Lachmann, Reiner Schwab, Georgios Panagopoulos, Peter Baumgartner, Mamatha Yakkegondi Virupakshappaa, Doris Schmitt-Landsiedel

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

5 Scopus citations

Abstract

This work presents a systematic approach to investigate transistor reliability at high frequencies with on-chip stress circuits. The problem of state-of-the art on-chip stress circuits is that the actual stress signal at the device cannot be verified by measurements. However, due to the exponential voltage dependency of transistor reliability mechanisms it is important to know the exact voltage of the generated stress signals. Therefore our RF reliability assessment methodology uses two test structures, one to generate AC stress signals on-chip and one to monitor these signals with an on-chip oscilloscope. The methodology is applied to study the frequency dependency of PBTI, NBTI and hot carrier degradation in a 28 nm high-k technology.

Original languageEnglish
Title of host publication2016 International Reliability Physics Symposium, IRPS 2016
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages4C51-4C57
ISBN (Electronic)9781467391368
DOIs
StatePublished - 22 Sep 2016
Event2016 International Reliability Physics Symposium, IRPS 2016 - Pasadena, United States
Duration: 17 Apr 201621 Apr 2016

Publication series

NameIEEE International Reliability Physics Symposium Proceedings
Volume2016-September
ISSN (Print)1541-7026

Conference

Conference2016 International Reliability Physics Symposium, IRPS 2016
Country/TerritoryUnited States
CityPasadena
Period17/04/1621/04/16

Fingerprint

Dive into the research topics of 'New methodology for on-chip RF reliability assessment'. Together they form a unique fingerprint.

Cite this