New lattice gas method for semiconductor transport simulations

M. Rieger, P. Vogl

Research output: Contribution to journalArticlepeer-review

6 Scopus citations

Abstract

We present a new lattice gas simulation technique for semiclassical semiconductor transport which is comparable in accuracy to Monte Carlo simulations, but is capable of dealing with arbitrarily complex spatial inhomogeneities, nonlinear dynamical effects and carrier instabilities with only a minimal additional cost in computer time, and runs orders of magnitude faster on parallel hardware.

Original languageEnglish
Pages (from-to)1399-1403
Number of pages5
JournalSolid-State Electronics
Volume32
Issue number12
DOIs
StatePublished - Dec 1989
Externally publishedYes

Keywords

  • Boltzmann equation
  • cellular automaton
  • device simulation
  • lattice gas
  • semiconductor transport

Fingerprint

Dive into the research topics of 'New lattice gas method for semiconductor transport simulations'. Together they form a unique fingerprint.

Cite this